Consider a uniformly doped silicon p-n junction at T=300°K. At zero bias, only 40 percent of the total space charge region is to be in the p-region. The built-in potential barrier is 1.2 volts. For zero bias determine total space charge region. (q=1.6x101°, kT/q=0.0259 volts at T=300°K, n=1010 cm, e=103.545x10")

Consider a uniformly doped silicon p-n junction at T=300°K. At zero bias, only 40 percent of the total space charge region is to be in the p-region. The built-in potential barrier is 1.2 volts. For zero bias determine total space charge region. (q=1.6x101°, kT/q=0.0259 volts at T=300°K, n=1010 cm, e=103.545x10")

Elements Of Electromagnetics

7th Edition

ISBN:9780190698614

Author:Sadiku, Matthew N. O.

Publisher:Sadiku, Matthew N. O.

ChapterMA: Math Assessment

Section: Chapter Questions

Problem 1.1MA

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