Consider a step pn junction made of silicon. The p- and n-sides are doped such that Ec – EF = 0.21 eV on the n-side and EF – Ev = 0.18 eV on the p-side. The pn junction is under zero bias and kept at T = 300 K. -3 Find the doping density in the n-side in unit of cm

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Consider a step pn junction made of silicon. The p- and n-sides are doped such that Ec – EF = 0.21 eV on the n-side
and EF – Ev = 0.18 eV on the p-side. The pn junction is under zero bias and kept at T = 300 K.
Find the doping density in the n-side in unit of cm
Transcribed Image Text:Consider a step pn junction made of silicon. The p- and n-sides are doped such that Ec – EF = 0.21 eV on the n-side and EF – Ev = 0.18 eV on the p-side. The pn junction is under zero bias and kept at T = 300 K. Find the doping density in the n-side in unit of cm
Find the built-in potential in unit of V.
Transcribed Image Text:Find the built-in potential in unit of V.
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