Consider a silicon Zener diode. The bandgap of silicon is Eg= 1.14 eV. We want to design the reverse break-down voltage to be 3V. Assume the reverse Zener breakdown occurs when the n-side conduction band edge, Ec, is 2.82 eV below the p-side valence band edge, Ey. Assume the dopant concentrations on the n-side and p-side are equal: NA=Np. What should be the value of the dopant concentration?

Consider a silicon Zener diode. The bandgap of silicon is Eg= 1.14 eV. We want to design the reverse break-down voltage to be 3V. Assume the reverse Zener breakdown occurs when the n-side conduction band edge, Ec, is 2.82 eV below the p-side valence band edge, Ey. Assume the dopant concentrations on the n-side and p-side are equal: NA=Np. What should be the value of the dopant concentration?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

For the circuit shown in Figure, consider Ideal diodes. If Vs = 19sin wt, Vb = 4 V, the minimum value of output voltage is: Vout at of estion Vs Vb Oa. -4 V Ob. -15 V Oc. -19 V Od. 4 V
Izmin=0.1mA
Capacitance per unit area at no reverse bias is two pF/cm². For a step graded diode of area 5cm², what is net capacitance at 99 V reverse bias voltage?
Make a sketch of the I–V characteristic curve for a diode with Is = 0.02 pA for VD values from zero to 0.7 V. Use the approximation ID = Is e^(Vd/VT) What is the slope of a line tangent to the curve at ID = 2 mA?
This about PN Junctions of semiconductors.
Consider the following diode circuit. 1kQ Vs 10 Vs VD t(ns) 10 -5 i. Calculate the current at t=0* in the circuit. ii. Calculate lş and IR when the diode is switched off at t=10 ns. Assume Von=0.7 V. i. Write the type of capacitances in a diode.
A p-type semiconductor joined to an n-type semiconductor ... Pick those that apply. Will not allow current to flow in either direction. Has electron current flowing from the n-type to the p-type material Makes a diode Allows positive current flow from the p-type to the n-type material
Sketch the transfer characteristic vo versus vi for the limiter circuit shown below. All diodes begin conducting at a forward voltage drop of 0.5V and have of 0.7V when fully conducting at 1mA.
A 0.5 W zener diode is rated to have VzT = 4 V at a test current of IzT =11.0 mA. Its incremental resistance r, = 68.0 Ohms. What voltage will result when conducting a reverse current of Iz = 21 mA? What is the maximum safe current, using the linearized model and including the effect of rz?
Consider an idealized diode with a reverse saturation current 0.01 mA and an abrupt turn-on voltage of 0.7 V (assume no breakdown and operation away from the knee of the diode curve). For the circuit shown, both resistors are 100 2, the constant source is Vp = 5 V, and the time-dependent source is V3 = 20 sin(at) V. Calculate (a) the peak positive voltage V and the associated current through the diode and (b) the peak negative voltage V and the associated current through the diode. Rulamting R Vs + > KHI
for the given circuit, input voltage is AC(10,-10)v, R=2KQ , diode is ideal. what is the Vout in the positive and negative cycle ? just write numbers example: 5v,6v ..
How does capacitance get created in a forward and reverse biased diode?Explain.