Consider a silicon wafer positioned in a furnace that is zone-heated on the top section and cooled on the lower section. The wafer is placed such that the top and bottom surfaces of the wafer exchange radiation with the hot and cold zones respectively of the furnace. The zone temperatures are Tgur,h = 1050 K and Tgur.c = 330 K. The emissivity and thickness of the wafer are e = 0.65 and d = 0.78 mm, respectively. With the ambient gas at T = 700 K, convection heat transfer coefficients at the upper and lower surfaces of the wafer are 8 and 4 W/m².K. Find the steady-state temperature of the wafer, in K.
Consider a silicon wafer positioned in a furnace that is zone-heated on the top section and cooled on the lower section. The wafer is placed such that the top and bottom surfaces of the wafer exchange radiation with the hot and cold zones respectively of the furnace. The zone temperatures are Tgur,h = 1050 K and Tgur.c = 330 K. The emissivity and thickness of the wafer are e = 0.65 and d = 0.78 mm, respectively. With the ambient gas at T = 700 K, convection heat transfer coefficients at the upper and lower surfaces of the wafer are 8 and 4 W/m².K. Find the steady-state temperature of the wafer, in K.
Elements Of Electromagnetics
7th Edition
ISBN:9780190698614
Author:Sadiku, Matthew N. O.
Publisher:Sadiku, Matthew N. O.
ChapterMA: Math Assessment
Section: Chapter Questions
Problem 1.1MA
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Transcribed Image Text:Consider a silicon wafer positioned in a furnace that is zone-heated on the top section and cooled on the
lower section. The wafer is placed such that the top and bottom surfaces of the wafer exchange radiation
with the hot and cold zones respectively of the furnace. The zone temperatures are Tsur,h = 1050 K and
Tsur.e = 330 K. The emissivity and thickness of the wafer are e = 0.65 and d = 0.78 mm, respectively.
With the ambient gas at T. = 700 K, convection heat transfer coefficients at the upper and lower
surfaces of the wafer are 8 and 4 W/m²-K. Find the steady-state temperature of the wafer, in K.
Tw
i
K
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