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Consider a Si sample kept at room temperature having a band gap Eg = 1.12 eV. (a) If the Fermi level EF is located exactly at the middle of the band gap for this sample, then what will be the probability of finding an electron at E = EC + 2kT? (b) If the Fermi level EF is located such that EF = EV, then what will be the probability of finding an electron at E = EV+kT?

Consider a Si sample kept at room temperature having a band gap Eg = 1.12 eV. (a) If the Fermi level EF is located exactly at the middle of the band gap for this sample, then what will be the probability of finding an electron at E = EC + 2kT? (b) If the Fermi level EF is located such that EF = EV, then what will be the probability of finding an electron at E = EV+kT?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Solve both a) and b) and show all the steps in your working

Consider a Si sample kept at room temperature having a band gap Eg = 1.12 eV. (a) If the Fermi level EF is located exactly at the middle of the band gap for this sample, then what will be the probability of finding an electron at E = EC + 2kT? (b) If the Fermi level EF is located such that EF = EV, then what will be the probability of finding an electron at E = EV+kT?
Transcribed Image Text:Consider a Si sample kept at room temperature having a band gap Eg = 1.12 eV. (a) If the Fermi level EF is located exactly at the middle of the band gap for this sample, then what will be the probability of finding an electron at E = EC + 2kT? (b) If the Fermi level EF is located such that EF = EV, then what will be the probability of finding an electron at E = EV+kT?
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