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Consider a pn junction with the p region doped 1023 atoms m³ and the n region doped 10¹9 m³ at 300 K. The intrinsic carrier concentration niin silicon is 1.5x10¹6 m³ at 300 K. Assume kT=0.026 eV and kT/q=0.026 V where T is the absolute temperature in degrees Kelvin and k is Boltzman's constant. Assume that the electron mobility He=0.04 m²/Vs and that the hole mobility μh-0.02 m²/Vs. Assume that the diffusion coefficient of electrons De=0.0038 m²/s while that of holes Dh=0.0012 m²/s. The thickness of the p region is 3 micron while the thickness of the n region is 5 micron. Apply a reverse voltage of 5 V and calculate the contact potential with this reverse voltage applied. Draw the energy band profile with this reverse voltage applied showing the conduction and valence bands, the Fermi energy, the depletion region and the contact potential energy.

Consider a pn junction with the p region doped 1023 atoms m³ and the n region doped 10¹9 m³ at 300 K. The intrinsic carrier concentration niin silicon is 1.5x10¹6 m³ at 300 K. Assume kT=0.026 eV and kT/q=0.026 V where T is the absolute temperature in degrees Kelvin and k is Boltzman's constant. Assume that the electron mobility He=0.04 m²/Vs and that the hole mobility μh-0.02 m²/Vs. Assume that the diffusion coefficient of electrons De=0.0038 m²/s while that of holes Dh=0.0012 m²/s. The thickness of the p region is 3 micron while the thickness of the n region is 5 micron. Apply a reverse voltage of 5 V and calculate the contact potential with this reverse voltage applied. Draw the energy band profile with this reverse voltage applied showing the conduction and valence bands, the Fermi energy, the depletion region and the contact potential energy.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Consider a pn junction with the p region doped 1023 atoms m³ and the n region doped 10¹9 m³ at 300 K. The intrinsic carrier concentration niin silicon is 1.5x10¹6 m³ at 300 K. Assume kT=0.026 eV and kT/q=0.026 V where T is the absolute temperature in degrees Kelvin and k is Boltzman's constant. Assume that the electron mobility He=0.04 m²/Vs and that the hole mobility μh=0.02 m²/Vs. Assume that the diffusion coefficient of electrons De=0.0038 m²/s while that of holes Dh=0.0012 m²/s. The thickness of the p region is 3 micron while the thickness of the n region is 5 micron. Apply a reverse voltage of 5 V and calculate the contact potential with this reverse voltage applied. Draw the energy band profile with this reverse voltage applied showing the conduction and valence bands, the Fermi energy, the depletion region and the contact potential energy.
Transcribed Image Text:Consider a pn junction with the p region doped 1023 atoms m³ and the n region doped 10¹9 m³ at 300 K. The intrinsic carrier concentration niin silicon is 1.5x10¹6 m³ at 300 K. Assume kT=0.026 eV and kT/q=0.026 V where T is the absolute temperature in degrees Kelvin and k is Boltzman's constant. Assume that the electron mobility He=0.04 m²/Vs and that the hole mobility μh=0.02 m²/Vs. Assume that the diffusion coefficient of electrons De=0.0038 m²/s while that of holes Dh=0.0012 m²/s. The thickness of the p region is 3 micron while the thickness of the n region is 5 micron. Apply a reverse voltage of 5 V and calculate the contact potential with this reverse voltage applied. Draw the energy band profile with this reverse voltage applied showing the conduction and valence bands, the Fermi energy, the depletion region and the contact potential energy.
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