Consider a MOSFET that has been fabricated on an n-type siliconwafer with initial uniform phosphorus doping, ND = 1.45 x 10^15 cm–3.The gate oxide of the device has a thickness tox = 22.50 nm and afixed charge density, Qf /q = 1.75 x 10^11 cm–2 (assume other oxidecharges are negligibly small). The work function difference betweenthe polysilicon gate and the silicon substrate is –0.85 V.If zero bias is applied between the source and the silicon substrate,and short channel effects are ignored, what is the threshold voltage ofthe device at room temperature (300 K)
Consider a MOSFET that has been fabricated on an n-type siliconwafer with initial uniform phosphorus doping, ND = 1.45 x 10^15 cm–3.The gate oxide of the device has a thickness tox = 22.50 nm and afixed charge density, Qf /q = 1.75 x 10^11 cm–2 (assume other oxidecharges are negligibly small). The work function difference betweenthe polysilicon gate and the silicon substrate is –0.85 V.If zero bias is applied between the source and the silicon substrate,and short channel effects are ignored, what is the threshold voltage ofthe device at room temperature (300 K)
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Question
Consider a MOSFET that has been fabricated on an n-type silicon
wafer with initial uniform phosphorus doping, ND = 1.45 x 10^15 cm–3.
The gate oxide of the device has a thickness tox = 22.50 nm and a
fixed charge density, Qf /q = 1.75 x 10^11 cm–2 (assume other oxide
charges are negligibly small). The work function difference between
the polysilicon gate and the silicon substrate is –0.85 V.
If zero bias is applied between the source and the silicon substrate,
and short channel effects are ignored, what is the threshold voltage of
the device at room temperature (300 K)
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