Homework Help is Here – Start Your Trial Now!
Science
Advanced Physics
Consider a contact between tungsten with work function F =4.55V and n-type silicon doped to N, =10" cm' at 300K. Give N. (si) =2.8 x10" cm and c = 4.01, calculate: i the barrier height ii the junction potential iii what type of contact is formed iv the depletion width v the maximum junction electric field

Consider a contact between tungsten with work function F =4.55V and n-type silicon doped to N, =10" cm' at 300K. Give N. (si) =2.8 x10" cm and c = 4.01, calculate: i the barrier height ii the junction potential iii what type of contact is formed iv the depletion width v the maximum junction electric field

icon
Related questions
Question
100%

please answer 

iv and v

Question Three Consider a contact between tungsten with work function F =4.55V and n-type silicon doped to N, =10" cm' at 300K. Give N (si) =2.8 x10" cm and c = 4.01, calculate: i the barrier height ii the junction potential iii what type of contact is formed iv the depletion width v the maximum junction electric field
Transcribed Image Text:Question Three Consider a contact between tungsten with work function F =4.55V and n-type silicon doped to N, =10" cm' at 300K. Give N (si) =2.8 x10" cm and c = 4.01, calculate: i the barrier height ii the junction potential iii what type of contact is formed iv the depletion width v the maximum junction electric field
Expert Solution
steps

Step by step

Solved in 2 steps

SEE SOLUTIONCheck out a sample Q&A here
Blurred answer