Consider a bar of p-type silicon that is uniformly doped to a value of NA = 2 x 106 cm 3 at T 300K The applied electric field is zero Light is incident on the enu u he semiconductor as shown in figure 4. The steady-state concentration of excess carriers generated at z = 0 is S,(0) = Sn(0) 2 x 10cm 3 Assume the following parameters: 1200 cm? /V 8, H, = 400cm2/V-s, Tn10 's, Tp= 5 x 10 s, and n, = 10 "cm Light p type X=(0 Figurè 4 Side-illumination 6) What is the steady-state electron and hole concentrations at r=0? 2.02 x 10 cm and p 2 x 104 cm 3 22 n- 0.5 x 10 cm and p 2 x 101 3. n 2x 10" cm 3 and p 0.5 x 10 cm3 #2x 10 em and p 2.02 x 10

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Consider a bar of p-type silicon that is uniformly doped to a value of NA 2 x 106 cm 3 at T 300K The applied electric field is zero Light is incident
on the enu u he semiconductor as shown in figure 4. The steady-state concentration of excess carriers generated at z = 0 is
S,(0) = 8,(0) = 2 x 10 cm 3 Assume the following parameters
H 1200 cm2 /V - s, Hp
%3D
= 400cm2/V
s, Tn = 10 "s, Tp = 5 x 10 s, and n, =
10 cm 3
Light
p type
x= 0
Figure 4 Side-illuhmination
6) What is the steady-state electron and hole concentrations at r 0?
n 2.02 x 10" cmand p 2 x 104,
cm
n 0.5 x 10 cm and p
2 x 101
3.
cm
n 2x 10" cm and p
0.5 x 10 cm3
2x 10 cm and p 2.02 x 10" cm
Transcribed Image Text:Consider a bar of p-type silicon that is uniformly doped to a value of NA 2 x 106 cm 3 at T 300K The applied electric field is zero Light is incident on the enu u he semiconductor as shown in figure 4. The steady-state concentration of excess carriers generated at z = 0 is S,(0) = 8,(0) = 2 x 10 cm 3 Assume the following parameters H 1200 cm2 /V - s, Hp %3D = 400cm2/V s, Tn = 10 "s, Tp = 5 x 10 s, and n, = 10 cm 3 Light p type x= 0 Figure 4 Side-illuhmination 6) What is the steady-state electron and hole concentrations at r 0? n 2.02 x 10" cmand p 2 x 104, cm n 0.5 x 10 cm and p 2 x 101 3. cm n 2x 10" cm and p 0.5 x 10 cm3 2x 10 cm and p 2.02 x 10" cm
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