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Compare the maximum capacitance that can be achieved in an area 100 × 100 μm² by using either an MOS capacitor or a reverse-biased P*N junction diode. Assume an oxide breakdown field of 8 × 106 V/cm, a 5V operating voltage, and a safety factor of two (i.e., design the MOS oxide for 10 V breakdown). The P+N junction is built by diffusing boron into N-type silicon doped to 1016 cm¯ cm-3

Compare the maximum capacitance that can be achieved in an area 100 × 100 μm² by using either an MOS capacitor or a reverse-biased P*N junction diode. Assume an oxide breakdown field of 8 × 106 V/cm, a 5V operating voltage, and a safety factor of two (i.e., design the MOS oxide for 10 V breakdown). The P+N junction is built by diffusing boron into N-type silicon doped to 1016 cm¯ cm-3

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Compare the maximum capacitance that can be achieved in an area 100 × 100 μm² by using either an MOS capacitor or a reverse-biased P*N junction diode. Assume an oxide breakdown field of 8 × 106 V/cm, a 5V operating voltage, and a safety factor of two (i.e., design the MOS oxide for 10 V breakdown). The P+N junction is built by diffusing boron into N-type silicon doped to 1016 cm¯ cm-3
Transcribed Image Text:Compare the maximum capacitance that can be achieved in an area 100 × 100 μm² by using either an MOS capacitor or a reverse-biased P*N junction diode. Assume an oxide breakdown field of 8 × 106 V/cm, a 5V operating voltage, and a safety factor of two (i.e., design the MOS oxide for 10 V breakdown). The P+N junction is built by diffusing boron into N-type silicon doped to 1016 cm¯ cm-3
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