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Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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At T= OK, the intrinsic carrier density in Si is (0, 0, 1.0 x 1010, 5 x 1022) cm³ and at T = 300K the intrinsic electron concentration of Si is (0, 0, 1.0 x 1010, 5 x 1022) cm³ and the intrinsic hole concentration is (LARGER ABOUT THE SAME, SMALLER) than the intrinsic electron concentration and this compares to the atomic density of crystalline Si which has about (1.5 x 1010, 1018, 5 x 10", Undetermined) atoms/cm³.
Transcribed Image Text:At T= OK, the intrinsic carrier density in Si is (0, 0, 1.0 x 1010, 5 x 1022) cm³ and at T = 300K the intrinsic electron concentration of Si is (0, 0, 1.0 x 1010, 5 x 1022) cm³ and the intrinsic hole concentration is (LARGER ABOUT THE SAME, SMALLER) than the intrinsic electron concentration and this compares to the atomic density of crystalline Si which has about (1.5 x 1010, 1018, 5 x 10", Undetermined) atoms/cm³.
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