Calculate the Ves for a NMOS transistor with B = 1900 µA/V, V, = 1 V and operating in saturation with a transconductance g = 7 mS. QI (a) %3D (b) For the circuit shown in Figure 1, draw the small signal equivalent circuit model valid in the mid-band frequency range and identify the kind of amplifier formed by the NMOS transistor Ml. Using the small equivalent model for the circuit of Figure 1, calculate the output impedance (Rout). Show the details of the calculation and state any assumption. VDD R1 Rp M1 V out Vin R2 ECG Rs Vss = 0 V Figure 1

Calculate the Ves for a NMOS transistor with B = 1900 µA/V, V, = 1 V and operating in saturation with a transconductance g = 7 mS. QI (a) %3D (b) For the circuit shown in Figure 1, draw the small signal equivalent circuit model valid in the mid-band frequency range and identify the kind of amplifier formed by the NMOS transistor Ml. Using the small equivalent model for the circuit of Figure 1, calculate the output impedance (Rout). Show the details of the calculation and state any assumption. VDD R1 Rp M1 V out Vin R2 ECG Rs Vss = 0 V Figure 1

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

With the help of circuit diagrams, list the different biasing methods for D- MOSFET and E-MOSFET amplifiers.
Please show work
1. To use the Bipolar Junction Transistor (BJT) as a small signal amplifier it must be biased in this region: A. South Park region B. Spatial interface region C. Inverse Thevenin region D. Linear or active region
Bipolar junction transistors (BJTS) are considered “normally-off" devices, because their natural state with no signal applied to the base is no . .between emitter and collector, like an open switch. *
b) For correct operation as an ac amplifier a npn BJT must be correctly DC biased to establish an appropriate Q-point, i.e a negative voltage VBC between the base and collector terminals and a positive voltage VBE between the base and emitter terminals. Figure 3.1 shows a circuit that can achieve this requirement. Explain the role of each resistive element in this circuit. Vin RB1 Cin HH iin RB2 + Rc VB RE + Vcc Vc Cout VE ww 11 Figure 3.1 th Vout Ce İout
Question 6 A large signal circuit model for a MOSFET consists of a dependent current source in parallel with an output resistance, ro, where ro can be expressed as 1/1lp or VA/ID. True False
a.) Consider a two-BJT configuration in Figure 1. You may assume that both transistors are the same with the same β, VBE,on = 0.7 V, and VCE,EOS = 0.3 V. Determine the minimum voltage VBE that will turn ON both Q1 and Q2. b.) Using the BJT small-signal model given in Figure 2, determine the AC current gain Ai = iout/iin for the circuit given in Figure 3. Assume ro >> rπ. You may assume that β is large.
a) Find the operating point current and voltage values of the non-linear element, in resistor R3 Calculate the voltage generated by the constant sources. b) Draw the circuit equivalent by linearizing the nonlinear element at the operating point. c) Using linearized equivalent small signal source j (t) to occur at R3 resistance calculate the voltage brought by it and give the expression of the VR3 voltage (constant sources and small sign sum of voltages generated by the source). E1=A=3 E2=B=8
Common Gate MOSFET Amplifier has Select one: a. input is connected to the Gate and the output is taken from the Source b. input is connected to the Source and the output is taken from the Drain c. input is connected to the Gate and the output is taken from the Drain d. input is connected to the Source and the output is taken from the Gate 55 week 10 material Jump to... CE255/EE255 (01)- 16
Design a voltage divider biased CE stage with emitter degeneration. That stage should support a voltage gain of 5 and an input impedance larger than 3 KOhms with a bias current of 0.5 mA. Assume Beta=100, Is = 5e-17. Neglect the early voltage effect. You also need to provide values for the operating point of this transistor. Find the output resistance of this stage if the early voltage = 20 V.
c) Figure 2.3 shows the circuit diagram of a typical npn BJT common emitter amplifier. The values of RB1-30 kOhm, RB2=10.XY kOhm, Rc-3.XY kOhm, Ic=2.XY mA and Vcc=24 V. If the transistor current gain 3 = 50 determine using the full analysis and assuming VBE = 0.7 V the value of RE, hence identify the location of the Q-point (Ic, VCE, IB and VBE). Now sketch the AC circuit model of this amplifier and determine the value of the ac open circuit voltage gain Av and the ac short circuit current gain Ai. (Assume that Vth = 26 mV). Vin RB1 Cin lin RB2 -10 Rc VB RE + Vcc Vc Cout VE www li Figure 2.3 Vout Ce ¡out x=1 y=7
In single transistor amplifier design, it is observed that the voltage gain will always decrease as the load resistance increases. True False The saturation region of MOSFET indicates that the drain current no longer depends on the source-drain voltage while the saturation region of BJT indicates that the collector current no longer depends on the collector-emitter voltage. True False A bipolar junction transistor can be connected to behave like a diode while a field effect transistor can not be connected to behave like a diode. True False A voltage follower circuit is usually designed to have the power gain slightly less than 1 with any passive load. True False A clipper circuit regulates DC voltage input while a clamp circuit regulates AC voltage input. True False