c) For the potential divider biasing circuit of the BJT shown below, the parameters of the transistor are; hfe=100, hie = 2 k. Neglecting hoe and hre, Cel 15 uF R₁ 80 kn R₂ +18V w 38 ΚΩ, RE 1.0kΩ· SR 4.7 ΚΩ C₂₂ 15uF R₁ 10 ΚΩ CE 100 uF i) Draw the ac equivalent circuit of the amplifier using the approximate h-parameter model of the transistor. iii) Find the voltage gain (Ar) of the amplifier. ii) Find the input and output impedances Z; and Zo of the amplifier.
c) For the potential divider biasing circuit of the BJT shown below, the parameters of the transistor are; hfe=100, hie = 2 k. Neglecting hoe and hre, Cel 15 uF R₁ 80 kn R₂ +18V w 38 ΚΩ, RE 1.0kΩ· SR 4.7 ΚΩ C₂₂ 15uF R₁ 10 ΚΩ CE 100 uF i) Draw the ac equivalent circuit of the amplifier using the approximate h-parameter model of the transistor. iii) Find the voltage gain (Ar) of the amplifier. ii) Find the input and output impedances Z; and Zo of the amplifier.
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Transcribed Image Text:c) For the potential divider biasing circuit of the BJT shown below, the parameters of the
transistor are; hfe=100, hie = 2 k. Neglecting hoe and hre,
Cel
15 uF
R₁
R₂
.80 ΚΩ
+18V
* 8 ΚΩ .
RE
1.0ΚΩ·
R₂ 4.7kQ
C₂
15uF
R₁
CE 100 uF
10 ΚΩ
i) Draw the ac equivalent circuit of the amplifier using the approximate h-parameter model
of the transistor.
iii) Find the voltage gain (Ar) of the amplifier.
ii) Find the input and output impedances Z; and Zo of the amplifier.
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