Briefly explain how we can change the barrier height and width experimentally in given structure. (a) AIGAAS AIGAAS E2 0.3 ev E, GaAs 6 nm Define following terms and define different geometry in GMR and TMR devices 6 nm (b) | Anisotropic Magnetoresistance (AMR) | Giant magnetoresistance (GMR) Tunnel magnetoresistance (TMR)
Briefly explain how we can change the barrier height and width experimentally in given structure. (a) AIGAAS AIGAAS E2 0.3 ev E, GaAs 6 nm Define following terms and define different geometry in GMR and TMR devices 6 nm (b) | Anisotropic Magnetoresistance (AMR) | Giant magnetoresistance (GMR) Tunnel magnetoresistance (TMR)
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(a)
Briefly explain how we can change the barrier height and width experimentally
in given structure.
AIGAAS
AIGAAS
E2
0.3 eV
E,
GaAs
6 nm
6 nm
Define following terms and define different geometry in GMR and TMR devices
(b)
| Anisotropic Magnetoresistance (AMR)
Giant magnetoresistance (GMR)
Tunnel magnetoresistance (TMR)
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