BE +10V R1 20k Q1 Ve R2 15k RE 1k
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Anyone familiar with this to provide step by step explanation? TIA

Transcribed Image Text:For the circuit below B = 100, VBE = 0.7 V. Find Icq and VCEQ-
+10V
R1
20k
Q1
R2
15k
RE
1k

Transcribed Image Text:Semiconductor Constants
Eg (eV)
1.1
B (cm³ K³2)
В (сm
Material
-3
Silicon (Si)
Gallium Arsenide (GaAs)
Germanium (Ge)
5.23 х 1015
2.10 x 1014
1.4
0.66
1.66 x 1015
Boltzmann's constant – 86 x 10-6 eV/K
Thermal Voltage at room temperature (300 K) – VT = 0.026 V
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