(Based on Neamen, Problem 10.37) - An ideal n-channel MOSFET has the following parameters 30μm 2μm = +0.8V W = L VT = = 450 fln tox = cm² V.S 350 Å (a) Plot ID versus VDs for 0 ≤ VDS ≤ 5V for VGS = 0V, 1V, 2V, 3V, 4V, 5V. Include on each curve the saturation point. (b) Plot √ID(sat) versus VGs for OV ≤ VGs ≤ 5V
(Based on Neamen, Problem 10.37) - An ideal n-channel MOSFET has the following parameters 30μm 2μm = +0.8V W = L VT = = 450 fln tox = cm² V.S 350 Å (a) Plot ID versus VDs for 0 ≤ VDS ≤ 5V for VGS = 0V, 1V, 2V, 3V, 4V, 5V. Include on each curve the saturation point. (b) Plot √ID(sat) versus VGs for OV ≤ VGs ≤ 5V
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![8.) (Based on Neamen, Problem 10.37) - An ideal n-channel MOSFET has the following
parameters
W
=
L =
VT
=
30μm
2μm
+0.8V
Hn
tox
= 450
=
cm²
2
V.S
350 Å
(a) Plot ID versus VDs for 0 ≤ VDs ≤ 5V for VGs = 0V, 1V, 2V, 3V, 4V, 5V. Include
on each curve the saturation point.
(b) Plot √ID(sat) versus VGs for 0V ≤ Vgs ≤ 5V
(c) Plot Ips versus VGs, assuming VDs = 0.1 V and for 0 ≤ VGS ≤ 5 V.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F90502412-4b42-4711-a1f0-0436bb4aba86%2F5ff5fbf9-a8fe-4c23-b8ee-5f83e759e723%2F3uzeq1a_processed.png&w=3840&q=75)
Transcribed Image Text:8.) (Based on Neamen, Problem 10.37) - An ideal n-channel MOSFET has the following
parameters
W
=
L =
VT
=
30μm
2μm
+0.8V
Hn
tox
= 450
=
cm²
2
V.S
350 Å
(a) Plot ID versus VDs for 0 ≤ VDs ≤ 5V for VGs = 0V, 1V, 2V, 3V, 4V, 5V. Include
on each curve the saturation point.
(b) Plot √ID(sat) versus VGs for 0V ≤ Vgs ≤ 5V
(c) Plot Ips versus VGs, assuming VDs = 0.1 V and for 0 ≤ VGS ≤ 5 V.
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