b) The net doping density. 3. A semiconductor has an intrinsic resistivity of 3x104 ohm-cm. Donor and acceptor atoms are added with densities of 10¹4 cm3 and 5x10¹² cm²³ respectively. Given ₁=1600 and p =600 cm²/V-s, determine the current density if the applied electric field is 100mV/cm. Assume that the carrier mobilities do not change with the change of doping density. P O n 4. A bar of intrinsic semiconductor has a resistance of 5 ohms at 360 K and 50 ohms at 330 K. Assume that the change in resistance is a result of the change in n, only. Calculate the band gap energy of the semiconductor. Assume that the carrier mobilities do not change with the change of temperature. hp PLECARE

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**Transcription:**

Consider the following problems related to semiconductors:

3. A semiconductor has an *intrinsic* resistivity of \(3 \times 10^4\) ohm-cm. *Donor and acceptor atoms are added* with densities of \(10^{14}\) cm\(^{-3}\) and \(5 \times 10^{12}\) cm\(^{-3}\) respectively. Given \(\mu_n = 1600\) and \(\mu_p = 600\) cm\(^2\)/V-s, determine the current density if the applied electric field is 100mV/cm. Assume that the carrier mobilities do not change with the change of doping density.

4. A bar of *intrinsic* semiconductor has a resistance of 5 ohms at 360 K and 50 ohms at 330 K. Assume that the change in resistance is a result of the change in \(n_i\) only. Calculate the band gap energy of the semiconductor. Assume that the carrier mobilities do not change with the change of temperature.
Transcribed Image Text:**Transcription:** Consider the following problems related to semiconductors: 3. A semiconductor has an *intrinsic* resistivity of \(3 \times 10^4\) ohm-cm. *Donor and acceptor atoms are added* with densities of \(10^{14}\) cm\(^{-3}\) and \(5 \times 10^{12}\) cm\(^{-3}\) respectively. Given \(\mu_n = 1600\) and \(\mu_p = 600\) cm\(^2\)/V-s, determine the current density if the applied electric field is 100mV/cm. Assume that the carrier mobilities do not change with the change of doping density. 4. A bar of *intrinsic* semiconductor has a resistance of 5 ohms at 360 K and 50 ohms at 330 K. Assume that the change in resistance is a result of the change in \(n_i\) only. Calculate the band gap energy of the semiconductor. Assume that the carrier mobilities do not change with the change of temperature.
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