(b) Draw the energy diagram of following pt-n-n* hetero-junction under equilibrium shown in Fig.1. Show all the energy levels, approximate Fermi level and built-in potential in the diagram. InP InGaAs InGaAs P+ n++ 1.6. jum 2 um 1.6 um Fig. 1

(b) Draw the energy diagram of following pt-n-n* hetero-junction under equilibrium shown in Fig.1. Show all the energy levels, approximate Fermi level and built-in potential in the diagram. InP InGaAs InGaAs P+ n++ 1.6. jum 2 um 1.6 um Fig. 1

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Concept explainers

Unijunction Transistor (UJT)

The Unijunction Transistor (UJT) is a three-terminal switching semiconductor device. It contains an n-shaped silicone object bar with a terminal attached to its two ends known as base one and base two. The third terminal is connected to a highly enclosed p-type material attached to the bar section of its length and is known as emitter. As there is only one corrective cross within the device, it is therefore called the 'Unijunction' transistor. The characteristics of the single junction transistor show the wrong resistance if it finds use in resting oscillator circuits for various applications.

Question

(b) Draw the energy diagram of following p+-n-n* hetero-junction under
equilibrium shown in Fig. 1.
Show all the energy levels, approximate Fermi level and built-in potential
in the diagram.
InP
InGaAs
InGaAs
P+
n++
1.6.
jum
2 jum
1.6
Fig. 1
(c) From Fig 2 determine the suitable substrates/materials for InGa As that can

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Course dashboard A diode has 3 mA at 0.6 V and 210 mA at 0.75 V. Find its reverse saturation current (Is) and 1 ideality factor (7). Assume V>Vị and take VT = 25 mV. Uyg Note that because of the approximations, your result might be slightly different than the correct answer. However, it should be very close to it; hence, in that case, simply go for the choice that is closest to your result. Lütfen birini seçin: O A. Is=1.04×10,77-1.99 O B. Is=1.208X10 -10, n=1.41 O C. Is=1.7x10, 7=1.74 O D. Is=2.69×10-8, 7=1.35 O E. Ig=4.27×10-10 7=1.85 OF. Is=11.42x10-1, 7=1.29
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Subject: Electronics Engineering Solve no 14
H3
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Suppose you have a diode whose junction cross sectional area is 100µm? and has the following additional properties: А Jsx 0.5 A/um2 m VGO n 2.3 1.17V 1 100µm2 What is the current flow through the device if biased with a forward voltage of 0.6V at a temperature of 125°C? What about at 0°C? At 27°C? Are diodes temperature-dependent devices?