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a)The emitter-bias configuration of figure below has the following specifications: cQ%31/2 Icsat, Icsa=8 mA, VC=18 V, and Bae= 110. Determine RC, RE, and RB. 28 V Rc -o Vc = 18 V B 110 RE

a)The emitter-bias configuration of figure below has the following specifications: cQ%31/2 Icsat, Icsa=8 mA, VC=18 V, and Bae= 110. Determine RC, RE, and RB. 28 V Rc -o Vc = 18 V B 110 RE

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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| (a)The emitter-bias configuration of figure below has the following specifications: Ico =1/2 Icsat, Icsa-8 mA, VC=18 V, and Bae= 110. Determine RC, RE, and RB. o 28 V Rc oVc = 18 V B = 110 RE (b) Design the circuit in the box to perform the function indicated in figure below Silicon diodes 10 V 2.7 V Design -10 V -17.3 V
Transcribed Image Text:| (a)The emitter-bias configuration of figure below has the following specifications: Ico =1/2 Icsat, Icsa-8 mA, VC=18 V, and Bae= 110. Determine RC, RE, and RB. o 28 V Rc oVc = 18 V B = 110 RE (b) Design the circuit in the box to perform the function indicated in figure below Silicon diodes 10 V 2.7 V Design -10 V -17.3 V
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