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At T 400K, what the concentration of free electrons / holes in intrinsic silicon? 1.5x1010/cm3 5.16x 1012/cm³ 5.16x 10-12/cm3 1.5x 10-10/cm

At T 400K, what the concentration of free electrons / holes in intrinsic silicon? 1.5x1010/cm3 5.16x 1012/cm³ 5.16x 10-12/cm3 1.5x 10-10/cm

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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17:21 4 Yesterday Edit 15:46 + x Bb 46 https://Ims.taibahu.edu.sa/webapps/assessment/take/launch.jsp?course assessment QUESTION 1 What is the number of electrons in the valence band of silicon? QUESTION 2 Al T 400K, what the concentration of free electrons / holes in intrinsic silicon? 1.5x1010/cm3 5.16x 1012/cm³ 5.16 x 10-12/cm3 1.5x 10-10/cm QUESTION 3 What is the thermal voltage equal to at T=400K? 25mV 25 9mV Click Save and Submit to save and submit. Click Save All Answers to save all answers. rv E 40 O HUAWEI i O O
Transcribed Image Text:17:21 4 Yesterday Edit 15:46 + x Bb 46 https://Ims.taibahu.edu.sa/webapps/assessment/take/launch.jsp?course assessment QUESTION 1 What is the number of electrons in the valence band of silicon? QUESTION 2 Al T 400K, what the concentration of free electrons / holes in intrinsic silicon? 1.5x1010/cm3 5.16x 1012/cm³ 5.16 x 10-12/cm3 1.5x 10-10/cm QUESTION 3 What is the thermal voltage equal to at T=400K? 25mV 25 9mV Click Save and Submit to save and submit. Click Save All Answers to save all answers. rv E 40 O HUAWEI i O O
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