Answer the following questions based on the C-V curve for an MOS capacitor shown in Fig. 5-39. The area of the capacitor is 104 μm². C(pF) A -1 FIGURE 5-39 B 0 с 0.5 [1] E 1 D QS C-V HF C-V Vg(V) (a) Is the substrate doping N type or P type? (b) What is the thickness of the oxide in the MOS capacitor? (c) What is the doping concentration of the substrate, Nsub? (d) What is the value of the capacitance at position C on the C-V curve shown above? (e) Sketch the energy band diagram of the MOS structure at positions A, B, C, D, and E on the C-V curve.
Answer the following questions based on the C-V curve for an MOS capacitor shown in Fig. 5-39. The area of the capacitor is 104 μm². C(pF) A -1 FIGURE 5-39 B 0 с 0.5 [1] E 1 D QS C-V HF C-V Vg(V) (a) Is the substrate doping N type or P type? (b) What is the thickness of the oxide in the MOS capacitor? (c) What is the doping concentration of the substrate, Nsub? (d) What is the value of the capacitance at position C on the C-V curve shown above? (e) Sketch the energy band diagram of the MOS structure at positions A, B, C, D, and E on the C-V curve.
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Transcribed Image Text:Answer the following questions based on the C-V curve for an MOS capacitor shown
in Fig. 5-39. The area of the capacitor is 104 μm².
A
-1
FIGURE 5-39
C(pF)
B
0
C
0.5
E
ID
1
QS C-V
HF C-V
V. (V)
(a) Is the substrate doping N type or P type?
(b) What is the thickness of the oxide in the MOS capacitor?
(c) What is the doping concentration of the substrate, Nsub?
(d)
What is the value of the capacitance at position C on the C-V curve shown above?
(e) Sketch the energy band diagram of the MOS structure at positions A, B, C, D, and
E on the C-V curve.
(f) At location B on the C-V curve, what is the band bending, o?
Solve these problems with Max C = 50pF, and Doping concentration is 3X10^17 cm^-3
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