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An opto-coupler is used to drive an NMOS transistor that in turn controls a DC motor. A “Photon" is used as th gic controller and has a logical-1 output voltage of approximately 3.3V and a logical-0 output of approximately 0V. btain a manufacturer's datasheet for the 2N7002 transistor. Based on the manufacturer's specifications, what is the maximum Ips and Vpss for the 2N7002? What is the range for the threshold voltage, VGS-Th? If the LED inside the opto-coupler has a VF of 1.2V @ 5mA, calculate a suitable value for Rin1. If the BJT inside the opto-coupler is in saturation (assume VcE-Sat = 0.0V), what is Ves for the 2N7002? Why would an opto-coupler be used here instead of driving the 2N7002 transistor directly with the logic voltage? VDD 5V Controller: -0 0.0V D1 -1 = 3.3V Rin1 Opto-Coupler 1N4001G Q1 R2 310ka 2N7002

An opto-coupler is used to drive an NMOS transistor that in turn controls a DC motor. A “Photon" is used as th gic controller and has a logical-1 output voltage of approximately 3.3V and a logical-0 output of approximately 0V. btain a manufacturer's datasheet for the 2N7002 transistor. Based on the manufacturer's specifications, what is the maximum Ips and Vpss for the 2N7002? What is the range for the threshold voltage, VGS-Th? If the LED inside the opto-coupler has a VF of 1.2V @ 5mA, calculate a suitable value for Rin1. If the BJT inside the opto-coupler is in saturation (assume VcE-Sat = 0.0V), what is Ves for the 2N7002? Why would an opto-coupler be used here instead of driving the 2N7002 transistor directly with the logic voltage? VDD 5V Controller: -0 0.0V D1 -1 = 3.3V Rin1 Opto-Coupler 1N4001G Q1 R2 310ka 2N7002

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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1. An opto-coupler is used to drive an NMOS transistor that in turn controls a DC motor. A "Photon" is used as the logic controller and has a logical-1 output voltage of approximately 3.3V and a logical-0 output of approximately 0V. Obtain a manufacturer's datasheet for the 2N7002 transistor. a. Based on the manufacturer's specifications, what is the maximum Ips and Vpss for the 2N7002? b. What is the range for the threshold voltage, Ves-Th? с. If the LED inside the opto-coupler has a VE of 1.2V @ 5mA, calculate a suitable value for Rin1. d. If the BJT inside the opto-coupler is in saturation (assume VCE-Sat = 0.0V), what is Ves for the 2N7002? е. Why would an opto-coupler be used here instead of driving the 2N7002 transistor directly with the logic voltage? VDD 5V To Logic Controller: Logical-0 = 0.ov Logical-1 = 3.3V D1 Rin1 Opto-Coupler 1N4001G Q1 Vf R2 10ka 2N7002
Transcribed Image Text:1. An opto-coupler is used to drive an NMOS transistor that in turn controls a DC motor. A "Photon" is used as the logic controller and has a logical-1 output voltage of approximately 3.3V and a logical-0 output of approximately 0V. Obtain a manufacturer's datasheet for the 2N7002 transistor. a. Based on the manufacturer's specifications, what is the maximum Ips and Vpss for the 2N7002? b. What is the range for the threshold voltage, Ves-Th? с. If the LED inside the opto-coupler has a VE of 1.2V @ 5mA, calculate a suitable value for Rin1. d. If the BJT inside the opto-coupler is in saturation (assume VCE-Sat = 0.0V), what is Ves for the 2N7002? е. Why would an opto-coupler be used here instead of driving the 2N7002 transistor directly with the logic voltage? VDD 5V To Logic Controller: Logical-0 = 0.ov Logical-1 = 3.3V D1 Rin1 Opto-Coupler 1N4001G Q1 Vf R2 10ka 2N7002
Value Symbol Parameter Unit 2N7000 2N7002 NDS7002A Voss VoOR Vass Drain-to-Source Voltage 60 V Symbol On Characteristics Vasth) Gate Threshold Voltage Parameter Conditions Туре Min. Туp. Мах. Unit Drain-Gate Voltage (Ros s1 MO) Gate-Source Voltage - Continuous Gate-Source Voltage - Non Repetitive (tp < 50 uS) 60 V 120 V Vos = Vos. 'o =1 mA 2N7000 0.8 2.1 3 V 140 2N7002 NDS7002A 260 1500 300 Maximum Drain Current - Continuous 200 115 Vos = Vas. Io = 250 LA 2.1 2.5 1 Maximum Drain Current - Pused Maximum Power Dissipation Derated above 25°C 500 800 Ros(ON) Static Drain-Source On-Resistance Vas = 10 V, o= 500 mA Vas = 10 V lo = 500 mA, Tc = 125°C Vas = 4.5 V, lo = 75 mA Vas- 10 V D= 500 mA Vas = 10 V lo = 500 mA, Tc = 100°C Vas = 5 V. o = 50 mA Vas = 5 V, ID = 50 mA, Tc = 100°C Vas = 10 V o- 500 mA Ves- 10 V, Io 500 mA, Tc= 125°C VGs = 5 V o = 50 mA Vas =5 V, lo = 50 mA, Tc = 125°C 2N7000 400 3.2 Po 200 mw 1.2 1.6 2.4 mwC 9 TJ TSTG Operating and Storage Temperature Range TL -55 to 150 -65 to 150 °C 1.9 Maximum Lead Temperature for Soldering Purposes, 1/16-inch from Case for 10O Seconds 300 °C 1.8 5.3 2N7002 1.2 7.5 Value Symbol Parameter Unit 1.7 13.5 2N7000 2N7002 NDS7002A ROJA Thermal Resistance, Junction to Ambient 312.5 625 417 1.7 7.5 Electrical Characteristics 2.4 13.5 Values are at Tc = 25°C unless otherwise noted. NDS7002A 1.2 Symbol Off Characteristics Parameter Conditions Туре Min. Тур. Маx. Unit 2 3.5 Drain-Source Breakdown VGs =0V, Ip = 10 uA BVoss voltage loss %3D All 60 1.7 3 Zero Gate Voltage Drain Current Vos = 48 V, Vas =Ov 2N700o0 Vos = 48 V, Ves = 0V, Tc- 125°C Vos - 60 V, Vas Ov 2N7002 Vos = 60 V, Vas = OV. NDS7002A Tc- 125°C VGs = 15 V, Vos -Ov 2N7000 1 LA 2.8 5 2N7000 Vos(ON) Drain-Source On-Voltage Vas = 10 V, D = 500 mA Vas = 4.5 V, ID = 75 mA Vos = 10 V, Io- 500 mA Vas = 5.0 V, lo = 50 mA VGs = 10 V. o- 500 mA VGs = 5.0 V, Io = 50 mA Vas = 4.5 V, Vos = 10 V Vas = 10 V Vos 22 Vos(on) Ves = 10 V, Vos 2 2 Voscon) Vos = 10 V ID= 200 mA Vosz 2Vos(ON)- o= 200 mÁ Vos 2Vos(ON) Io= 200 mA V 1 LA 0.6 2.5 0.5 mA 0.14 0.4 lassF Gate - Body Leakage, Forward 2N7002 10 NA 0.6 3.75 VGs = 20 V, Vos = 0v 2N7002 NDS7002A 100 nA 0.09 1.5 Gate - Body Leakage Reverse VGs =-15 V, Vos =ov 2N700O0 NDS7002A IGSSR 0.6 1 -10 nA VGs = -20 V, Vos =Ov 2N7002 NDS7002A 0.09 0.15 -100 nA ID(ON) On-State Drain Current 2N7000 mA 75 600 Symbol Parameter Conditions Туре Min. Туp. Мах. Unit 2N7002 Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time 500 2700 Ciss Coss Crss Vos = 25 V, VGs "OV, r= 1.0 MHz All 20 50 pF All 11 25 NDS7002A 2700 500 All 4 Forward 2N7000 ms 100 320 VDD- 15 V, RL- 25 2 'o = 500 mA Vas= 10 V, RGEN = 250 VDD = 30 V, RL- 150 2 2N7002 Ip = 200 mA, Vas= 10 V, NDS7002A RGEN = 25 N VDD= 15 V, RL = 25 0 lo-500 mA, Vas 10 V, RGEN = 25 N Vop = 30 V, RL = 150 2N7002 D= 200 mA, VGs" 10 V, NDS7002A RGEN = 25 2 Transconductance ton 2N7000 ns 10 2N7002 80 320 NDS7002A 20 80 320 tom Turn-Off Time 2N7000 ns 10 20 Drain-Source Diode Characteristics and Maximum Ratings 2N7002 NDS7002A 2N7002 NOS7002A Is Maximum Continuous Drain-Source Diode Forward 115 Current 280 ISM Maximum Pulsed Drain-Source Diode Forward 0.8 A Current Drain-Source Diode Forward Voltage 1.5 VGs = 0V Is 115 mA(1) Vas - OV, Is = 400 mA(1) VsD 2N7002 0.88 1.5 NDS7002A 0.88 1.2 Note: 1. Pulse test : Pulse Width s 300 us. Duty Cycel s 2 %.
Transcribed Image Text:Value Symbol Parameter Unit 2N7000 2N7002 NDS7002A Voss VoOR Vass Drain-to-Source Voltage 60 V Symbol On Characteristics Vasth) Gate Threshold Voltage Parameter Conditions Туре Min. Туp. Мах. Unit Drain-Gate Voltage (Ros s1 MO) Gate-Source Voltage - Continuous Gate-Source Voltage - Non Repetitive (tp < 50 uS) 60 V 120 V Vos = Vos. 'o =1 mA 2N7000 0.8 2.1 3 V 140 2N7002 NDS7002A 260 1500 300 Maximum Drain Current - Continuous 200 115 Vos = Vas. Io = 250 LA 2.1 2.5 1 Maximum Drain Current - Pused Maximum Power Dissipation Derated above 25°C 500 800 Ros(ON) Static Drain-Source On-Resistance Vas = 10 V, o= 500 mA Vas = 10 V lo = 500 mA, Tc = 125°C Vas = 4.5 V, lo = 75 mA Vas- 10 V D= 500 mA Vas = 10 V lo = 500 mA, Tc = 100°C Vas = 5 V. o = 50 mA Vas = 5 V, ID = 50 mA, Tc = 100°C Vas = 10 V o- 500 mA Ves- 10 V, Io 500 mA, Tc= 125°C VGs = 5 V o = 50 mA Vas =5 V, lo = 50 mA, Tc = 125°C 2N7000 400 3.2 Po 200 mw 1.2 1.6 2.4 mwC 9 TJ TSTG Operating and Storage Temperature Range TL -55 to 150 -65 to 150 °C 1.9 Maximum Lead Temperature for Soldering Purposes, 1/16-inch from Case for 10O Seconds 300 °C 1.8 5.3 2N7002 1.2 7.5 Value Symbol Parameter Unit 1.7 13.5 2N7000 2N7002 NDS7002A ROJA Thermal Resistance, Junction to Ambient 312.5 625 417 1.7 7.5 Electrical Characteristics 2.4 13.5 Values are at Tc = 25°C unless otherwise noted. NDS7002A 1.2 Symbol Off Characteristics Parameter Conditions Туре Min. Тур. Маx. Unit 2 3.5 Drain-Source Breakdown VGs =0V, Ip = 10 uA BVoss voltage loss %3D All 60 1.7 3 Zero Gate Voltage Drain Current Vos = 48 V, Vas =Ov 2N700o0 Vos = 48 V, Ves = 0V, Tc- 125°C Vos - 60 V, Vas Ov 2N7002 Vos = 60 V, Vas = OV. NDS7002A Tc- 125°C VGs = 15 V, Vos -Ov 2N7000 1 LA 2.8 5 2N7000 Vos(ON) Drain-Source On-Voltage Vas = 10 V, D = 500 mA Vas = 4.5 V, ID = 75 mA Vos = 10 V, Io- 500 mA Vas = 5.0 V, lo = 50 mA VGs = 10 V. o- 500 mA VGs = 5.0 V, Io = 50 mA Vas = 4.5 V, Vos = 10 V Vas = 10 V Vos 22 Vos(on) Ves = 10 V, Vos 2 2 Voscon) Vos = 10 V ID= 200 mA Vosz 2Vos(ON)- o= 200 mÁ Vos 2Vos(ON) Io= 200 mA V 1 LA 0.6 2.5 0.5 mA 0.14 0.4 lassF Gate - Body Leakage, Forward 2N7002 10 NA 0.6 3.75 VGs = 20 V, Vos = 0v 2N7002 NDS7002A 100 nA 0.09 1.5 Gate - Body Leakage Reverse VGs =-15 V, Vos =ov 2N700O0 NDS7002A IGSSR 0.6 1 -10 nA VGs = -20 V, Vos =Ov 2N7002 NDS7002A 0.09 0.15 -100 nA ID(ON) On-State Drain Current 2N7000 mA 75 600 Symbol Parameter Conditions Туре Min. Туp. Мах. Unit 2N7002 Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time 500 2700 Ciss Coss Crss Vos = 25 V, VGs "OV, r= 1.0 MHz All 20 50 pF All 11 25 NDS7002A 2700 500 All 4 Forward 2N7000 ms 100 320 VDD- 15 V, RL- 25 2 'o = 500 mA Vas= 10 V, RGEN = 250 VDD = 30 V, RL- 150 2 2N7002 Ip = 200 mA, Vas= 10 V, NDS7002A RGEN = 25 N VDD= 15 V, RL = 25 0 lo-500 mA, Vas 10 V, RGEN = 25 N Vop = 30 V, RL = 150 2N7002 D= 200 mA, VGs" 10 V, NDS7002A RGEN = 25 2 Transconductance ton 2N7000 ns 10 2N7002 80 320 NDS7002A 20 80 320 tom Turn-Off Time 2N7000 ns 10 20 Drain-Source Diode Characteristics and Maximum Ratings 2N7002 NDS7002A 2N7002 NOS7002A Is Maximum Continuous Drain-Source Diode Forward 115 Current 280 ISM Maximum Pulsed Drain-Source Diode Forward 0.8 A Current Drain-Source Diode Forward Voltage 1.5 VGs = 0V Is 115 mA(1) Vas - OV, Is = 400 mA(1) VsD 2N7002 0.88 1.5 NDS7002A 0.88 1.2 Note: 1. Pulse test : Pulse Width s 300 us. Duty Cycel s 2 %.
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