An NMOS transistor has a threshold voltage of 0.4 V and a supply voltage of VDD = 1.2 V. A circuit designer is evaluating a proposal to reduce Vt by 100 mV to obtain faster transistors. By what factor would the saturation current increase (at Vgs = Vds = VoD) if the transistor were ideal?
An NMOS transistor has a threshold voltage of 0.4 V and a supply voltage of VDD = 1.2 V. A circuit designer is evaluating a proposal to reduce Vt by 100 mV to obtain faster transistors. By what factor would the saturation current increase (at Vgs = Vds = VoD) if the transistor were ideal?
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