Mobility (cm²/V.s) 1600 1400 Мп Мр 1200 1000 800 600 400 200 0 1014 1015 1016 1017 1018 Na + Nd (ions/cm³) 1019 1020 An N-type silicon sample has a uniform density Nd = 10¹7 cm³ of arsenic, and a P-type sample has Na = 1015cm 3. A third sample has both impurities present at the same time. (a) Find the equilibrium minority carrier concentrations at 300 K in each sample. (b) Find the conductivity of each sample at 300 K. (c) Find the Fermi level in each material at 300 K with respect to either the conduction band edge (Ec) or the valence band edge (Ev).
Mobility (cm²/V.s) 1600 1400 Мп Мр 1200 1000 800 600 400 200 0 1014 1015 1016 1017 1018 Na + Nd (ions/cm³) 1019 1020 An N-type silicon sample has a uniform density Nd = 10¹7 cm³ of arsenic, and a P-type sample has Na = 1015cm 3. A third sample has both impurities present at the same time. (a) Find the equilibrium minority carrier concentrations at 300 K in each sample. (b) Find the conductivity of each sample at 300 K. (c) Find the Fermi level in each material at 300 K with respect to either the conduction band edge (Ec) or the valence band edge (Ev).
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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