An n-type Si sample is doped at 10¹5 cm³. We shine light on it to create electron-hole pairs at 1019 cm³s¹. The lifetime of minority carriers is 100 ns. a. What is the steady state concentration of minority carriers? b. How much time has elapsed for the excess carrier concentration to be at 90% of the initial value? c. How much time has elapsed for the excess carrier concentration to decay to 10% above the minority carrier concentration at thermal equilibrium?
An n-type Si sample is doped at 10¹5 cm³. We shine light on it to create electron-hole pairs at 1019 cm³s¹. The lifetime of minority carriers is 100 ns. a. What is the steady state concentration of minority carriers? b. How much time has elapsed for the excess carrier concentration to be at 90% of the initial value? c. How much time has elapsed for the excess carrier concentration to decay to 10% above the minority carrier concentration at thermal equilibrium?
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Transcribed Image Text:Prob. 6. Illumination- decay of excess carriers
An n-type Si sample is doped at 1015 cm3. We shine light on it to create electron-hole pairs at
1019 cms. The lifetime of minority carriers is 100 ns.
a. What is the steady state concentration of minority carriers?
b. How much time has elapsed for the excess carrier concentration to be at 90% of the
initial value?
C. How much time has elapsed for the excess carrier concentration to decay to 10% above
the minority carrier concentration at thermal equilibrium?
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