An inverter is given below. VDD Wp = 10 um Vout(t) WN = 5 um Vin(t) The NMOS and PMOS transistors are fabricated using the following technology: VDD = 3 V VIN= VTP = 0.6 V Uy= 1200 cm²/Vsec Hp = 600 cm²/Vsec Cox = 6.9 x 10-7 F/cm² L= 0.25 um The current through a MOSFET is defined as: Vps (Vcs – VỊ)VDs –- 2 µCox W (a) Compute the static DC current when VN= 2V. (b) Compute the output voltage when VN = 2V.
An inverter is given below. VDD Wp = 10 um Vout(t) WN = 5 um Vin(t) The NMOS and PMOS transistors are fabricated using the following technology: VDD = 3 V VIN= VTP = 0.6 V Uy= 1200 cm²/Vsec Hp = 600 cm²/Vsec Cox = 6.9 x 10-7 F/cm² L= 0.25 um The current through a MOSFET is defined as: Vps (Vcs – VỊ)VDs –- 2 µCox W (a) Compute the static DC current when VN= 2V. (b) Compute the output voltage when VN = 2V.
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Find static DC current
![An inverter is given below.
VDD
Wp = 10 um
Vout(t)
WN = 5 um
Vin(t)
The NMOS and PMOS transistors are fabricated using the following technology:
VDD = 3 V
VIN =VTP = 0.6 V
UN = 1200 cm²/Vsec
Hp = 600 cm?/Vsec
Cox = 6.9 x 10-7 F/cm?
L = 0.25 um
The current through a MOSFET is defined as:
Vos
(VGs - V7)VDs -
2
µCox W
L
(a)
Compute the static DC current when VIN=2V.
(b)
Compute the output voltage when VN=2V.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fb63cb365-95f1-4dee-a709-4120daedac93%2Fd7707178-a182-4249-8caa-c949d0d68a81%2F1jqwn8_processed.png&w=3840&q=75)
Transcribed Image Text:An inverter is given below.
VDD
Wp = 10 um
Vout(t)
WN = 5 um
Vin(t)
The NMOS and PMOS transistors are fabricated using the following technology:
VDD = 3 V
VIN =VTP = 0.6 V
UN = 1200 cm²/Vsec
Hp = 600 cm?/Vsec
Cox = 6.9 x 10-7 F/cm?
L = 0.25 um
The current through a MOSFET is defined as:
Vos
(VGs - V7)VDs -
2
µCox W
L
(a)
Compute the static DC current when VIN=2V.
(b)
Compute the output voltage when VN=2V.
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