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An enhancement-lype MOSFET is fabricated 0.4μm find the 16 fm. Process in with L=0.8 μm and w= value of Is for Vov = 0.5V and Vos = IV. Do not neglect CLM. If Yps is increased by 2.2V what Comexponding change in ID. is the Parameter VTHO ре сох VA N-CA 0.7V 200MA/12 to Yμm

An enhancement-lype MOSFET is fabricated 0.4μm find the 16 fm. Process in with L=0.8 μm and w= value of Is for Vov = 0.5V and Vos = IV. Do not neglect CLM. If Yps is increased by 2.2V what Comexponding change in ID. is the Parameter VTHO ре сох VA N-CA 0.7V 200MA/12 to Yμm

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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An enhancement-Type MOSFET is fabricated o 0.4μμm Process in with L=0.8μμm and w= 16 μm. find the value of Is for Vov = 0.5V and VAS = IV. Do not neglect CLM. If Yps is increased by 2-2V what Corresponding change in ID. is the Parameter VIHO не сох VA N-C4 0.7V 200MA/12 to Yum
Transcribed Image Text:An enhancement-Type MOSFET is fabricated o 0.4μμm Process in with L=0.8μμm and w= 16 μm. find the value of Is for Vov = 0.5V and VAS = IV. Do not neglect CLM. If Yps is increased by 2-2V what Corresponding change in ID. is the Parameter VIHO не сох VA N-C4 0.7V 200MA/12 to Yum
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