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An electrical fan is used to cool electrical components when the temperature exceeds a certain limit. The fan is trolled by a microcontroller that sends a logical-1 (3.3V) to an interface circuit that in tum activates the motor. When temperature falls below the upper limit, the microcontroller sends a logical-0 (0.0V) to the interface circuit and the or turns off. are to design a simple transistor switch controller circuit for this application and decide to use the design shown Fan motor draws 24W when running "GND -24V D2 IN4001OP "DO NPN Transistor ow. You have the following npn transistors available to you: 2N2222A, SS8050, and 2N3904. If the fan draws 24W when running, what is the collector current, Ic? What would the maximum Vce voltage be across the transistor when the it is in cut-off? Based on the design criteria and the manufacturer's specifications for the 3 transistors, which one would work for this application? Why?

An electrical fan is used to cool electrical components when the temperature exceeds a certain limit. The fan is trolled by a microcontroller that sends a logical-1 (3.3V) to an interface circuit that in tum activates the motor. When temperature falls below the upper limit, the microcontroller sends a logical-0 (0.0V) to the interface circuit and the or turns off. are to design a simple transistor switch controller circuit for this application and decide to use the design shown Fan motor draws 24W when running "GND -24V D2 IN4001OP "DO NPN Transistor ow. You have the following npn transistors available to you: 2N2222A, SS8050, and 2N3904. If the fan draws 24W when running, what is the collector current, Ic? What would the maximum Vce voltage be across the transistor when the it is in cut-off? Based on the design criteria and the manufacturer's specifications for the 3 transistors, which one would work for this application? Why?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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3. An electrical fan is used to cool electrical components when the temperature exceeds a certain limit. The fan is controlled by a microcontroller that sends a logical-1 (3.3V) to an interface circuit that in turn activates the motor. When the temperature falls below the upper limit, the microcontroller sends a logical-0 (0.0V) to the interface circuit and the motor turns off. You are to design a simple transistor switch controller circuit for this application and decide to use the design shown Fan motor draws V2 24W when running "GND -24V D2 IN40010P u2 "DO" as NPN Transistor Ib below. You have the following npn transistors available to you: 2N2222A, SS8050, and 2N3904. a. If the fan draws 24W when running, what is the collector current, Ic? b. What would the maximum Vce voltage be across the transistor when the it is in cut-off? c. Based on the design criteria and the manufacturer's specifications for the 3 transistors, which one would work for this application? Why? d. For the transistor you selected, determine the minimum gain (B) for this transistor from the manufacturer's datasheet. e. What is the minimum base current, Is, that would be needed to turn the motor on fully? f. Calculate a suitable value of Rg such that the transistor is in saturation when the microcontroller outputs a logical-1 (3.3V). g. What is the purpose of the 1N4001GP? How is it used?
Transcribed Image Text:3. An electrical fan is used to cool electrical components when the temperature exceeds a certain limit. The fan is controlled by a microcontroller that sends a logical-1 (3.3V) to an interface circuit that in turn activates the motor. When the temperature falls below the upper limit, the microcontroller sends a logical-0 (0.0V) to the interface circuit and the motor turns off. You are to design a simple transistor switch controller circuit for this application and decide to use the design shown Fan motor draws V2 24W when running "GND -24V D2 IN40010P u2 "DO" as NPN Transistor Ib below. You have the following npn transistors available to you: 2N2222A, SS8050, and 2N3904. a. If the fan draws 24W when running, what is the collector current, Ic? b. What would the maximum Vce voltage be across the transistor when the it is in cut-off? c. Based on the design criteria and the manufacturer's specifications for the 3 transistors, which one would work for this application? Why? d. For the transistor you selected, determine the minimum gain (B) for this transistor from the manufacturer's datasheet. e. What is the minimum base current, Is, that would be needed to turn the motor on fully? f. Calculate a suitable value of Rg such that the transistor is in saturation when the microcontroller outputs a logical-1 (3.3V). g. What is the purpose of the 1N4001GP? How is it used?
2N2222A 2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier Small Signal Switching Transistor Electrical Characteristics Values are at TA = 25°C unless otherwise noted. ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Symbol Parameter Conditions Min. Мах. Unit Characteristic Symbol Min Max Unit OFF CHARACTERISTICS OFF CHARACTERISTICS VBRCEO Collector-Emitter Breakdown Voltage Ic = 1.0 mA, Ig = 0 VBRICBO Collector-Base Breakdown Voltage Ic 10 pA, lE 0 le = 10 µA, le = 0 VCE 30 V, VEB = 3 V Vce " 30 V, Ves= 3 W 40 V Colector-Emitter Breakdown Voltage (le 10 mAdc) VBRICEO 50 Vdc 60 V Emitter-Base Breakdown Voltage Base Cut-Off Current Collector Cut-Off Current VBREBO 6.0 V Collector-Base Cutoff Current (Vce= 75 Vdc) (Ven = 60 Vdc) Iceo 10 HAdc nAdc IBL 50 nA 50 ICEX ON CHARACTERISTICS5) nA Emitter-Base Cutoff Current (VEe = 60 Vdc (Ven =4.0 Vdc) 10 10 HAdc nAdc c = 0.1 mA VcE 1.0 V lc= 1.0 mA, VcE 1.0 V c= 10 mA, VCE 1.0 V Ic = 50 mA, VcE = 1.0 V Iç =100 mA, VCE= 1.0V 40 Collector-Emitter Cutoff Current ICES 50 nAdc 70 (Vce = 50 vdc) hFE DC Current Gain 100 300 ON CHARACTERISTICS (Note 1) DC Current Gain (le = 0.1 mAdc, Ver = 10 Vdc) de 10 mAdc. Ver= 10 Vdc (Iç = 10 mAdc, VCE = 10 Vdc) le = 150 mAdc, Vce = 10 Vdc) (le = 500 mAdc, VcE = 10 Vdc) 60 hFE 30 50 75 100 100 30 325 Ic 10 mA, 1.0 mA 02 VcE(sat) Collector-Emitter Saturation Voltage V lc=50 mA, lg=5.0 mA lc = 10 mA, Ig = 1.0 mA Ic 50 mA, In5.0 mA 300 0.3 0.65 0.85 Collector-Emitter Saturation Voltage (le = 150 mAdc, la = 15 mAdc) lc = 500 mAdc, lg = 50 mAdc) VCEsat) Vdc Veglsat) Base-Emitter Saturation Voltage V 0.95 0.3 1.0 SMALL SIGNAL CHARACTERISTICS Base-Emitter Saturation Voltage (lc = 150 mAdc, la= 15 mAdc) (Iç = 500 mAdc, lg = 50 mAdc) Vdc lc = 10 mA, VcE = 20 V f= 100 MHz VcB = 5.0 V, le" 0, f= 100 kHz VER = 0.5 V, le = 0, f= 100 kHz lc = 100 HA. VeE =5.0 V. Rs = 1.0 ks2 f= 10 Hz to 15.7 kHz 0.6 1.2 20 Current Gain - Bandwidth Product fT 300 MHz SMALL- SIGNAL CHARACTERISTICS Magnitude of Smal-Signal Current Gain (lc= 20 mAdc, Vce 20 Vdc, f= 100 MHz) Small-Signal Current Gain (lc = 1.0 mAdc, VCE = 10 Vdc, f= 1 KHZ) Cobo Output Capacitance 4.0 pF 2.5 Cbo Input Capacitance 8.0 pF he 50 NF Noise Figure 5.0 dB Input Capacitance (VEB = 0.5 Vdc, lç = 0, 100 KHz Sts 1.0 MHz) Outout Capacitance (Vce = 10 Vdc, lg =0,100 KHZ s fs 1.0 MHZ) Coo pF 25 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Cobo pF 8.0 Vcc = 3.0 V. VBe-0.5 V Iç = 10 mA, l81 =1.0 mA 35 ns SWITCHING (SATURATED) CHARACTERISTICS 35 ns Turn-On Time (Reference Figure in MIL-PRF-19500/255) on 35 ns Vcc = 3.0 V. lc 10 mA. B1= le2 1.0 mA 200 ns 50 ns Turn-Off Time (Reference Figure in MIL-PRF-19500/255) 300 ns SS8050 NPN Epitaxial Silicon Transistor Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Conditions Parameter Min. Тур. Мах. Unit c= 100 HA, lg= 0 Collector-Emitter Breakdown Voltagec=2 mA, Ig= 0 = 100 µA, Ic = 0 Collector-Base Breakdown Voltage BVCBO BVCEO 40 V 25 V BVEBO Emitter-Base Breakdown Voltage 6 V Icao Collector Cut-Of Current Vca = 35 V, lg = 0 100 nA Ves = 6 V. le =0 VCE= 1 V, lç = 5 mA VCE1 V, lc= 100 mA VCE = 1 V, le = 800 mA lc = 800 mA, Ig = 80 mA Emitter Cut-Off Current 100 nA 45 DC Current Gain 85 300 40 VcE(sat) Collector-Emiter Saturation Voltage 0.5 V VeE(sat) Base-Emitter Saturation Voltage c= 800 mA, Ig = 80 mA 1.2 V Veelon) Base-Emitter On Voltage Vce1 V, le= 10 mA 1. Cob Output Capacitance Vce = 10 V, le = 0, 9.0 pF f= 1 MHz Current Gain Bandwidth Product VcE = 10 V, le= 50 mA 100 MHz
Transcribed Image Text:2N2222A 2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier Small Signal Switching Transistor Electrical Characteristics Values are at TA = 25°C unless otherwise noted. ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Symbol Parameter Conditions Min. Мах. Unit Characteristic Symbol Min Max Unit OFF CHARACTERISTICS OFF CHARACTERISTICS VBRCEO Collector-Emitter Breakdown Voltage Ic = 1.0 mA, Ig = 0 VBRICBO Collector-Base Breakdown Voltage Ic 10 pA, lE 0 le = 10 µA, le = 0 VCE 30 V, VEB = 3 V Vce " 30 V, Ves= 3 W 40 V Colector-Emitter Breakdown Voltage (le 10 mAdc) VBRICEO 50 Vdc 60 V Emitter-Base Breakdown Voltage Base Cut-Off Current Collector Cut-Off Current VBREBO 6.0 V Collector-Base Cutoff Current (Vce= 75 Vdc) (Ven = 60 Vdc) Iceo 10 HAdc nAdc IBL 50 nA 50 ICEX ON CHARACTERISTICS5) nA Emitter-Base Cutoff Current (VEe = 60 Vdc (Ven =4.0 Vdc) 10 10 HAdc nAdc c = 0.1 mA VcE 1.0 V lc= 1.0 mA, VcE 1.0 V c= 10 mA, VCE 1.0 V Ic = 50 mA, VcE = 1.0 V Iç =100 mA, VCE= 1.0V 40 Collector-Emitter Cutoff Current ICES 50 nAdc 70 (Vce = 50 vdc) hFE DC Current Gain 100 300 ON CHARACTERISTICS (Note 1) DC Current Gain (le = 0.1 mAdc, Ver = 10 Vdc) de 10 mAdc. Ver= 10 Vdc (Iç = 10 mAdc, VCE = 10 Vdc) le = 150 mAdc, Vce = 10 Vdc) (le = 500 mAdc, VcE = 10 Vdc) 60 hFE 30 50 75 100 100 30 325 Ic 10 mA, 1.0 mA 02 VcE(sat) Collector-Emitter Saturation Voltage V lc=50 mA, lg=5.0 mA lc = 10 mA, Ig = 1.0 mA Ic 50 mA, In5.0 mA 300 0.3 0.65 0.85 Collector-Emitter Saturation Voltage (le = 150 mAdc, la = 15 mAdc) lc = 500 mAdc, lg = 50 mAdc) VCEsat) Vdc Veglsat) Base-Emitter Saturation Voltage V 0.95 0.3 1.0 SMALL SIGNAL CHARACTERISTICS Base-Emitter Saturation Voltage (lc = 150 mAdc, la= 15 mAdc) (Iç = 500 mAdc, lg = 50 mAdc) Vdc lc = 10 mA, VcE = 20 V f= 100 MHz VcB = 5.0 V, le" 0, f= 100 kHz VER = 0.5 V, le = 0, f= 100 kHz lc = 100 HA. VeE =5.0 V. Rs = 1.0 ks2 f= 10 Hz to 15.7 kHz 0.6 1.2 20 Current Gain - Bandwidth Product fT 300 MHz SMALL- SIGNAL CHARACTERISTICS Magnitude of Smal-Signal Current Gain (lc= 20 mAdc, Vce 20 Vdc, f= 100 MHz) Small-Signal Current Gain (lc = 1.0 mAdc, VCE = 10 Vdc, f= 1 KHZ) Cobo Output Capacitance 4.0 pF 2.5 Cbo Input Capacitance 8.0 pF he 50 NF Noise Figure 5.0 dB Input Capacitance (VEB = 0.5 Vdc, lç = 0, 100 KHz Sts 1.0 MHz) Outout Capacitance (Vce = 10 Vdc, lg =0,100 KHZ s fs 1.0 MHZ) Coo pF 25 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Cobo pF 8.0 Vcc = 3.0 V. VBe-0.5 V Iç = 10 mA, l81 =1.0 mA 35 ns SWITCHING (SATURATED) CHARACTERISTICS 35 ns Turn-On Time (Reference Figure in MIL-PRF-19500/255) on 35 ns Vcc = 3.0 V. lc 10 mA. B1= le2 1.0 mA 200 ns 50 ns Turn-Off Time (Reference Figure in MIL-PRF-19500/255) 300 ns SS8050 NPN Epitaxial Silicon Transistor Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Conditions Parameter Min. Тур. Мах. Unit c= 100 HA, lg= 0 Collector-Emitter Breakdown Voltagec=2 mA, Ig= 0 = 100 µA, Ic = 0 Collector-Base Breakdown Voltage BVCBO BVCEO 40 V 25 V BVEBO Emitter-Base Breakdown Voltage 6 V Icao Collector Cut-Of Current Vca = 35 V, lg = 0 100 nA Ves = 6 V. le =0 VCE= 1 V, lç = 5 mA VCE1 V, lc= 100 mA VCE = 1 V, le = 800 mA lc = 800 mA, Ig = 80 mA Emitter Cut-Off Current 100 nA 45 DC Current Gain 85 300 40 VcE(sat) Collector-Emiter Saturation Voltage 0.5 V VeE(sat) Base-Emitter Saturation Voltage c= 800 mA, Ig = 80 mA 1.2 V Veelon) Base-Emitter On Voltage Vce1 V, le= 10 mA 1. Cob Output Capacitance Vce = 10 V, le = 0, 9.0 pF f= 1 MHz Current Gain Bandwidth Product VcE = 10 V, le= 50 mA 100 MHz
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