Advanced Physics 8.17 The two neighboring MOS capacitors C, and C2 shown in Figure P8.17a have identical C-V charac- teristics (plotted in Figure P8.17b using the depletion approximation) when measured between gate and bulk. Sketch the capacitance as a function of voltage when it is measured between the two gates with the bulk terminal floating. Identify important features in your sketch. Same C, same Obs Same VG, same Obs All trapped charge Cor AV = C, VFB =0 VGI VG2 VG VEB = 0 VT VG (a) (b) FIGURE 8.17 Measurement of interface-trap density using two different meth- ods: (a) ideal and nonideal high-frequency C-V characteristics; (b) nonideal low- frequency and nonideal high-frequency C-V characteristics.

Advanced Physics 8.17 The two neighboring MOS capacitors C, and C2 shown in Figure P8.17a have identical C-V charac- teristics (plotted in Figure P8.17b using the depletion approximation) when measured between gate and bulk. Sketch the capacitance as a function of voltage when it is measured between the two gates with the bulk terminal floating. Identify important features in your sketch. Same C, same Obs Same VG, same Obs All trapped charge Cor AV = C, VFB =0 VGI VG2 VG VEB = 0 VT VG (a) (b) FIGURE 8.17 Measurement of interface-trap density using two different meth- ods: (a) ideal and nonideal high-frequency C-V characteristics; (b) nonideal low- frequency and nonideal high-frequency C-V characteristics.