A) What is the diffusion length (Lp) of holes at T = 300 [K] in this intrinsic a-Si:H layer in [nm]? kB ·T %3D Dp (hint: use the Einstein relationship: Hp B) What is the drift length (Ldrift ) of electrons in this intrinsic a-Si:H layer in [µm]? (hint: Larift = e· E·T, where E is the electric field strength) C) How long does it take for an electron to drift to the n-doped layer when it is generated at the top of the intrinsic layer? Give the answer in [ns]
A) What is the diffusion length (Lp) of holes at T = 300 [K] in this intrinsic a-Si:H layer in [nm]? kB ·T %3D Dp (hint: use the Einstein relationship: Hp B) What is the drift length (Ldrift ) of electrons in this intrinsic a-Si:H layer in [µm]? (hint: Larift = e· E·T, where E is the electric field strength) C) How long does it take for an electron to drift to the n-doped layer when it is generated at the top of the intrinsic layer? Give the answer in [ns]
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![A) What is the diffusion length (Lp) of holes at T = 300 K in this intrinsic a-Si:H layer in [nm]?
kB ·T
(hint: use the Einstein relationship:
Hp
B) What is the drift length (Ldrift) of electrons in this intrinsic a-Si:H layer in [µm]?
(hint: Ldrift = µ· E·T, where E is the electric field strength)
C) How long does it take for an electron to drift to the n-doped layer when it is generated at the top of the
intrinsic layer? Give the answer in ns](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F5c4731a9-c681-4fad-9b75-bd65170528b3%2F279426e6-ab1f-42ec-aa26-fb34cd8c001d%2Fd5vohdg_processed.png&w=3840&q=75)
Transcribed Image Text:A) What is the diffusion length (Lp) of holes at T = 300 K in this intrinsic a-Si:H layer in [nm]?
kB ·T
(hint: use the Einstein relationship:
Hp
B) What is the drift length (Ldrift) of electrons in this intrinsic a-Si:H layer in [µm]?
(hint: Ldrift = µ· E·T, where E is the electric field strength)
C) How long does it take for an electron to drift to the n-doped layer when it is generated at the top of the
intrinsic layer? Give the answer in ns
![In the figure below the structure of a superstrate a-Si:H based solar cell is depicted.
Glass superstrate
TCO
i
i-a-Si:H
ZnO/SiO, back reflector
Metal back contact
The maximum diffusion length in an intrinsic a-Si:H layer is in the order of 100 - 300 nm, which is small
compared to the required optical thickness. Therefore it is opted to utilize a p-i-n structure that relies on drift
rather than diffusion for charge carrier seperation.
Consider the following material properties:
Hole mobility: 4n = 0.2 [cm²V¯'s1]
Electron mobility: He = 1 [cm? V's1]
Charge carrier lifetime T = 1·10~7 [s]
Built in voltage: Vbi = 1.5 [V]
Thickness of the intrinsic layer: d;
= 500 [nm]](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F5c4731a9-c681-4fad-9b75-bd65170528b3%2F279426e6-ab1f-42ec-aa26-fb34cd8c001d%2F4kx17d_processed.png&w=3840&q=75)
Transcribed Image Text:In the figure below the structure of a superstrate a-Si:H based solar cell is depicted.
Glass superstrate
TCO
i
i-a-Si:H
ZnO/SiO, back reflector
Metal back contact
The maximum diffusion length in an intrinsic a-Si:H layer is in the order of 100 - 300 nm, which is small
compared to the required optical thickness. Therefore it is opted to utilize a p-i-n structure that relies on drift
rather than diffusion for charge carrier seperation.
Consider the following material properties:
Hole mobility: 4n = 0.2 [cm²V¯'s1]
Electron mobility: He = 1 [cm? V's1]
Charge carrier lifetime T = 1·10~7 [s]
Built in voltage: Vbi = 1.5 [V]
Thickness of the intrinsic layer: d;
= 500 [nm]
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