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A) What is the diffusion length (Lp) of holes at T = 300 [K] in this intrinsic a-Si:H layer in [nm]? kB ·T %3D Dp (hint: use the Einstein relationship: Hp B) What is the drift length (Ldrift ) of electrons in this intrinsic a-Si:H layer in [µm]? (hint: Larift = e· E·T, where E is the electric field strength) C) How long does it take for an electron to drift to the n-doped layer when it is generated at the top of the intrinsic layer? Give the answer in [ns]

A) What is the diffusion length (Lp) of holes at T = 300 [K] in this intrinsic a-Si:H layer in [nm]? kB ·T %3D Dp (hint: use the Einstein relationship: Hp B) What is the drift length (Ldrift ) of electrons in this intrinsic a-Si:H layer in [µm]? (hint: Larift = e· E·T, where E is the electric field strength) C) How long does it take for an electron to drift to the n-doped layer when it is generated at the top of the intrinsic layer? Give the answer in [ns]

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A) What is the diffusion length (Lp) of holes at T = 300 K in this intrinsic a-Si:H layer in [nm]? kB ·T (hint: use the Einstein relationship: Hp B) What is the drift length (Ldrift) of electrons in this intrinsic a-Si:H layer in [µm]? (hint: Ldrift = µ· E·T, where E is the electric field strength) C) How long does it take for an electron to drift to the n-doped layer when it is generated at the top of the intrinsic layer? Give the answer in ns
Transcribed Image Text:A) What is the diffusion length (Lp) of holes at T = 300 K in this intrinsic a-Si:H layer in [nm]? kB ·T (hint: use the Einstein relationship: Hp B) What is the drift length (Ldrift) of electrons in this intrinsic a-Si:H layer in [µm]? (hint: Ldrift = µ· E·T, where E is the electric field strength) C) How long does it take for an electron to drift to the n-doped layer when it is generated at the top of the intrinsic layer? Give the answer in ns
In the figure below the structure of a superstrate a-Si:H based solar cell is depicted. Glass superstrate TCO i i-a-Si:H ZnO/SiO, back reflector Metal back contact The maximum diffusion length in an intrinsic a-Si:H layer is in the order of 100 - 300 nm, which is small compared to the required optical thickness. Therefore it is opted to utilize a p-i-n structure that relies on drift rather than diffusion for charge carrier seperation. Consider the following material properties: Hole mobility: 4n = 0.2 [cm²V¯'s1] Electron mobility: He = 1 [cm? V's1] Charge carrier lifetime T = 1·10~7 [s] Built in voltage: Vbi = 1.5 [V] Thickness of the intrinsic layer: d; = 500 [nm]
Transcribed Image Text:In the figure below the structure of a superstrate a-Si:H based solar cell is depicted. Glass superstrate TCO i i-a-Si:H ZnO/SiO, back reflector Metal back contact The maximum diffusion length in an intrinsic a-Si:H layer is in the order of 100 - 300 nm, which is small compared to the required optical thickness. Therefore it is opted to utilize a p-i-n structure that relies on drift rather than diffusion for charge carrier seperation. Consider the following material properties: Hole mobility: 4n = 0.2 [cm²V¯'s1] Electron mobility: He = 1 [cm? V's1] Charge carrier lifetime T = 1·10~7 [s] Built in voltage: Vbi = 1.5 [V] Thickness of the intrinsic layer: d; = 500 [nm]
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