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a) Using the depletion approximation and C = dQs/dV, derive Eq (7.12) in the Semiconductor Device Fundamentals textbook: 2 NB(x) = qK EgA²d(1/C})/dv Note that under the depletion approximation Qs = QANBW (assuming a one-side junction), where W is the depletion region width on the lightly doped side. Also recall that the reverse- biased capacitance C = C, : W

a) Using the depletion approximation and C = dQs/dV, derive Eq (7.12) in the Semiconductor Device Fundamentals textbook: 2 NB(x) = qK EgA²d(1/C})/dv Note that under the depletion approximation Qs = QANBW (assuming a one-side junction), where W is the depletion region width on the lightly doped side. Also recall that the reverse- biased capacitance C = C, : W

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Derive the equation for doping profile of a one sided junction using depletion approximation. The full question is attached as an image below

**a) Using the depletion approximation and \( C = dQ_s/dV \), derive Eq (7.12) in the Semiconductor Device Fundamentals textbook:** \[ N_B(x) = \frac{2}{qK_s\varepsilon_0A^2 d(1/C_J^2)/dV} \] Note that under the depletion approximation \( Q_s = qAN_BW \) (assuming a one-side junction), where \( W \) is the depletion region width on the lightly doped side. Also recall that the reverse-biased capacitance \( C = C_J = \frac{K_s\varepsilon_0A}{W} \).
Transcribed Image Text:**a) Using the depletion approximation and \( C = dQ_s/dV \), derive Eq (7.12) in the Semiconductor Device Fundamentals textbook:** \[ N_B(x) = \frac{2}{qK_s\varepsilon_0A^2 d(1/C_J^2)/dV} \] Note that under the depletion approximation \( Q_s = qAN_BW \) (assuming a one-side junction), where \( W \) is the depletion region width on the lightly doped side. Also recall that the reverse-biased capacitance \( C = C_J = \frac{K_s\varepsilon_0A}{W} \).
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