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A silicon wafer is uniformly doped with 4.5 x 1016 phosphorus atoms/cm³ and 5.5 x 10¹6 boron atoms/cm³. Find the electron and hole concentra- tions, the electron and hole mobilities, and the re- sistivity of this silicon material at 300 K. Is this material n- or p-type?

A silicon wafer is uniformly doped with 4.5 x 1016 phosphorus atoms/cm³ and 5.5 x 10¹6 boron atoms/cm³. Find the electron and hole concentra- tions, the electron and hole mobilities, and the re- sistivity of this silicon material at 300 K. Is this material n- or p-type?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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### Semiconductor Doping Analysis **Problem Statement:** A silicon wafer is uniformly doped with: - \( 4.5 \times 10^{16} \) phosphorus atoms/cm\(^3\) - \( 5.5 \times 10^{16} \) boron atoms/cm\(^3\) **Tasks:** 1. **Determine Electronic Properties:** - Find the electron and hole concentrations. - Calculate the electron and hole mobilities. - Determine the resistivity of the silicon material at 300 K. 2. **Material Type:** - Identify if the material is n-type or p-type. **Solution Steps:** - **Concentration Analysis:** - Since both n-type (phosphorus) and p-type (boron) dopants are present, subtract their concentrations to find the dominant carrier type. - Calculate the effective carrier concentration. - **Mobility and Resistivity:** - Use known values or equations for electron and hole mobility at 300 K. - Use resistivity formulas based on carrier concentration and mobility. - **Type Identification:** - Compare dopant concentrations to determine whether n-type or p-type carriers dominate. This analysis helps understand the electrical characteristics of the doped silicon wafer, crucial for semiconductor device applications.
Transcribed Image Text:### Semiconductor Doping Analysis **Problem Statement:** A silicon wafer is uniformly doped with: - \( 4.5 \times 10^{16} \) phosphorus atoms/cm\(^3\) - \( 5.5 \times 10^{16} \) boron atoms/cm\(^3\) **Tasks:** 1. **Determine Electronic Properties:** - Find the electron and hole concentrations. - Calculate the electron and hole mobilities. - Determine the resistivity of the silicon material at 300 K. 2. **Material Type:** - Identify if the material is n-type or p-type. **Solution Steps:** - **Concentration Analysis:** - Since both n-type (phosphorus) and p-type (boron) dopants are present, subtract their concentrations to find the dominant carrier type. - Calculate the effective carrier concentration. - **Mobility and Resistivity:** - Use known values or equations for electron and hole mobility at 300 K. - Use resistivity formulas based on carrier concentration and mobility. - **Type Identification:** - Compare dopant concentrations to determine whether n-type or p-type carriers dominate. This analysis helps understand the electrical characteristics of the doped silicon wafer, crucial for semiconductor device applications.
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