A silicon wafer is uniformly doped with 4.5 x 1016 phosphorus atoms/cm³ and 5.5 x 10¹6 boron atoms/cm³. Find the electron and hole concentra- tions, the electron and hole mobilities, and the re- sistivity of this silicon material at 300 K. Is this material n- or p-type?
A silicon wafer is uniformly doped with 4.5 x 1016 phosphorus atoms/cm³ and 5.5 x 10¹6 boron atoms/cm³. Find the electron and hole concentra- tions, the electron and hole mobilities, and the re- sistivity of this silicon material at 300 K. Is this material n- or p-type?
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
Related questions
Question
100%
Hello. Last time I accedentally asked a question I knew about. This is what I ment to send. Could you help me figure out this problem?
Thank you for your time and help.
Transcribed Image Text:### Semiconductor Doping Analysis
**Problem Statement:**
A silicon wafer is uniformly doped with:
- \( 4.5 \times 10^{16} \) phosphorus atoms/cm\(^3\)
- \( 5.5 \times 10^{16} \) boron atoms/cm\(^3\)
**Tasks:**
1. **Determine Electronic Properties:**
- Find the electron and hole concentrations.
- Calculate the electron and hole mobilities.
- Determine the resistivity of the silicon material at 300 K.
2. **Material Type:**
- Identify if the material is n-type or p-type.
**Solution Steps:**
- **Concentration Analysis:**
- Since both n-type (phosphorus) and p-type (boron) dopants are present, subtract their concentrations to find the dominant carrier type.
- Calculate the effective carrier concentration.
- **Mobility and Resistivity:**
- Use known values or equations for electron and hole mobility at 300 K.
- Use resistivity formulas based on carrier concentration and mobility.
- **Type Identification:**
- Compare dopant concentrations to determine whether n-type or p-type carriers dominate.
This analysis helps understand the electrical characteristics of the doped silicon wafer, crucial for semiconductor device applications.
Expert Solution
This question has been solved!
Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.
This is a popular solution!
Trending now
This is a popular solution!
Step by step
Solved in 3 steps
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,