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A Si pn-junction has a cross sectional area of 1x10 cm, at 300 K a forward bias voltage of 4 V results in 1.5x20- cm -3 excess holes at the edge position of the depletion region in the n-side of the junction, assuming a hole lifetime of 1 ps, then the hole current at a penetration depth of 5 pm in the neutral n-region will be: 5.460e-5 A 2.574e-6 A 5.694e-6 A 7.800e-6 A 0 1.665e-8 A

A Si pn-junction has a cross sectional area of 1x10 cm, at 300 K a forward bias voltage of 4 V results in 1.5x20- cm -3 excess holes at the edge position of the depletion region in the n-side of the junction, assuming a hole lifetime of 1 ps, then the hole current at a penetration depth of 5 pm in the neutral n-region will be: 5.460e-5 A 2.574e-6 A 5.694e-6 A 7.800e-6 A 0 1.665e-8 A

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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A Si pn-junction has a cross sectional area of 1x10 cm, at 300 x a forward bias voltage of 4 V results in 1.5x20- cm excess holes at the edge position of the depletion region in the n-side of the junction, assuming a hole lifetime of 1 ps, then the hole current at a penetration depth of 5 pm in the neutral n-region will be: 5.460e-5 A 2.574e-6 A 5.694e-6 A 07.800e-6 A 0 1.665e-8 A
Transcribed Image Text:A Si pn-junction has a cross sectional area of 1x10 cm, at 300 x a forward bias voltage of 4 V results in 1.5x20- cm excess holes at the edge position of the depletion region in the n-side of the junction, assuming a hole lifetime of 1 ps, then the hole current at a penetration depth of 5 pm in the neutral n-region will be: 5.460e-5 A 2.574e-6 A 5.694e-6 A 07.800e-6 A 0 1.665e-8 A
: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-34 Js Si Ge -31 9.11 x 10 Kg mo E, (eV) ni (cm-3) Hn (cm2/V – s) Hp (cm2/V – s) Ne (cm-3) No (cm 3) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10 19 C 1500 3900 8500 -12 8.85 x 10 F/m Eo 450 1900 400 -34 1.05 x 10 J- s 2.78 x 1019 1.04 x 1019 4.45 x 1017 8.6 x 10-5 eV/K 26 mV (T = 300 K) 26 meV (T = 300 K) 3 x 108 m/s K 9.84 x 1018 6 x 1018 7.72 x 1018 KT/q m /m. 0.082 0.98 0.067 KT m/m. Er (F/m) 0.28 0.49 0.45 11.7 16 13.1 nair = 1 = 3.66 Some useful relations E9ALGA1- As (x) = 1.424 + 1.247x EgIn Ga1-As (T) = 0.36 + 1.064x 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm2
Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-34 Js Si Ge -31 9.11 x 10 Kg mo E, (eV) ni (cm-3) Hn (cm2/V – s) Hp (cm2/V – s) Ne (cm-3) No (cm 3) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10 19 C 1500 3900 8500 -12 8.85 x 10 F/m Eo 450 1900 400 -34 1.05 x 10 J- s 2.78 x 1019 1.04 x 1019 4.45 x 1017 8.6 x 10-5 eV/K 26 mV (T = 300 K) 26 meV (T = 300 K) 3 x 108 m/s K 9.84 x 1018 6 x 1018 7.72 x 1018 KT/q m /m. 0.082 0.98 0.067 KT m/m. Er (F/m) 0.28 0.49 0.45 11.7 16 13.1 nair = 1 = 3.66 Some useful relations E9ALGA1- As (x) = 1.424 + 1.247x EgIn Ga1-As (T) = 0.36 + 1.064x 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm2
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