A semiconductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with No = 1019/cm3, If the excess electron concen- tration in the steady state is An = 1015/cm3 and = 10 usec. (minority carries life time) the generation rate due to irradiation if %3D

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A semiconductor is irradiated with light such that
carriers are uniformly generated throughout its
volume. The semiconductor is n-type with
No = 1019/cm3. If the excess electron concen-
tration in the steady state is An = 1015/cm3 and
if Tp=
= 10 usec. (minority carries life time) the
generation rate due to irradiation
Transcribed Image Text:A semiconductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with No = 1019/cm3. If the excess electron concen- tration in the steady state is An = 1015/cm3 and if Tp= = 10 usec. (minority carries life time) the generation rate due to irradiation
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