A semiconductor can be made into thermistors since their superior temperature sensitivity of conductivity. Consider a wire 0.5 mm in diameter and 10 mm long made of intrinsic silicon. If the resistance of the wire can be measured to within 103 ohm, calculate the temperature sensitivity of this device at 300K. At 300K conductivity of silicon is 4x10-4 ohm1 m1. The band gap is 1.107 eV.

A semiconductor can be made into thermistors since their superior temperature sensitivity of conductivity. Consider a wire 0.5 mm in diameter and 10 mm long made of intrinsic silicon. If the resistance of the wire can be measured to within 103 ohm, calculate the temperature sensitivity of this device at 300K. At 300K conductivity of silicon is 4x10-4 ohm1 m1. The band gap is 1.107 eV.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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