A pn diode is fabricated by adding a concentration of donor atoms, ND = 4.25 x 10^17 cm–3 into the surface region of a p-type silicon wafer with an acceptor concentration of NA = 1.05 x 10^15 cm–3. Calculate the depletion capacitance with zero applied bias across the device.

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A pn diode is fabricated by adding a concentration of donor atoms,
ND = 4.25 x 10^17 cm–3 into the surface region of a p-type silicon wafer
with an acceptor concentration of NA = 1.05 x 10^15 cm–3. Calculate the
depletion capacitance with zero applied bias across the device.

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