A phosphorus-doped silicon wafer for an electrical component has an electrical resistivity of 8.33 × 10-5 Ω.m at 270C. The density of the donor atoms is 2.37×1019 atoms /m3. Assume mobilities of charge carriers to be the constants 0.135 m2/ (V.s) for electrons and 0.048 m2/ (V.s) for holes. Determine its majority- carriers concentration (carriers per cubic meter) if complete ionization is assumed?

A phosphorus-doped silicon wafer for an electrical component has an electrical resistivity of 8.33 × 10-5 Ω.m at 270C. The density of the donor atoms is 2.37×1019 atoms /m3. Assume mobilities of charge carriers to be the constants 0.135 m2/ (V.s) for electrons and 0.048 m2/ (V.s) for holes. Determine its majority- carriers concentration (carriers per cubic meter) if complete ionization is assumed?