A long silicon pn-junction diode has a reverse saturation current density J = 1.0 x10 11 A/cm². A light source is incident on the space charge region such as shown in Figure P8.35, producing a generation current density of 10 mA/cm² when the diode is short circuited. Please calculate the open circuit voltage Voc Illumination w-d -O-VR +0- Figure P8,35 Figure for Problem 8.35 and 8.36.

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A long silicon pn-junction diode has a reverse saturation current density J = 1.0 x10
11 A/cm². A light source is incident on the space charge region such as shown in Figure
P8.35, producing a generation current density of 10 mA/cm² when the diode is short
circuited. Please calculate the open circuit voltage Voc
Illumination
w-d
-O-VR +0-
Figure P8,35 Figure for
Problem 8.35 and 8.36.
Transcribed Image Text:A long silicon pn-junction diode has a reverse saturation current density J = 1.0 x10 11 A/cm². A light source is incident on the space charge region such as shown in Figure P8.35, producing a generation current density of 10 mA/cm² when the diode is short circuited. Please calculate the open circuit voltage Voc Illumination w-d -O-VR +0- Figure P8,35 Figure for Problem 8.35 and 8.36.
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