A laser beam of 220 mW with a photon energy of 1.6 eV is incident on a GaAs PIN phot-detector. The detector i-region width is 6 um, its cross sectional area is A = 0.8 cmr, and its absorption coefficient at the incident photon energy is agass = 1 x10 cm. If 20% of the incident photon flux is reflected back at the detector surface, the detector photo-current is: Select one: O A. 0.0438 A OB. 0.0878 A OC. 0.0658 A OD. 0.110 A OE. 0.132 A

A laser beam of 220 mW with a photon energy of 1.6 eV is incident on a GaAs PIN phot-detector. The detector i-region width is 6 um, its cross sectional area is A = 0.8 cmr, and its absorption coefficient at the incident photon energy is agass = 1 x10 cm. If 20% of the incident photon flux is reflected back at the detector surface, the detector photo-current is: Select one: O A. 0.0438 A OB. 0.0878 A OC. 0.0658 A OD. 0.110 A OE. 0.132 A

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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