(a) IB, IE, and IC. (b) VCE, VBE, and VCE. (c) adc (d) Is the transistor in saturation, linear, or cutoff region. Why?

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Q13: For the following figure below, assume ßDc is 200 and Vcc= 10 V and
VBB = 3 V, thetransistor is created from silicon material, find:
Rc
1.0 kN
RB
Vcc
100 kN
VBB
(а) IB, IE, and IC.
(b) VCE, VBE, and VCE.
(c) adc
(d) Is the transistor in saturation, linear, or cutoff region. Why?
Transcribed Image Text:Q13: For the following figure below, assume ßDc is 200 and Vcc= 10 V and VBB = 3 V, thetransistor is created from silicon material, find: Rc 1.0 kN RB Vcc 100 kN VBB (а) IB, IE, and IC. (b) VCE, VBE, and VCE. (c) adc (d) Is the transistor in saturation, linear, or cutoff region. Why?
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