A high electron mobility transistor (HEMT) controls large currents by applying a small voltage to a thin sheet of electrons. The density and mobility of the electrons in the sheet are critical for the operation of the HEMT. HEMTs consisting of AlGaN/GaN/Si are being studied because they promise better performance at higher currents, temperatures, and frequencies than conventional silicon HEMTs can achieve. In one study, the Hall effect was used to measure the density of electrons in one of these new HEMTs. When a current of 10.0 μA flows through the length of the electron sheet, which is 1.00 mm long, 0.300 mm wide, and 10.0 nm thick, a magnetic field of 1.00 T perpendicular to the sheet produces a voltage of 0.680 mV across the width of the sheet. What is the density of electrons in the sheet?
A high electron mobility transistor (HEMT) controls large currents by applying a small voltage to a thin sheet of electrons. The density and mobility of the electrons in the sheet are critical for the operation of the HEMT. HEMTs consisting of AlGaN/GaN/Si are being studied because they promise better performance at higher currents, temperatures, and frequencies than conventional silicon HEMTs can achieve. In one study, the Hall effect was used to measure the density of electrons in one of these new HEMTs. When a current of 10.0 μA flows through the length of the electron sheet, which is 1.00 mm long, 0.300 mm wide, and 10.0 nm thick, a magnetic field of 1.00 T perpendicular to the sheet produces a voltage of 0.680 mV across the width of the sheet. What is the density of electrons in the sheet?
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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A high electron mobility transistor (HEMT) controls large currents by applying a small voltage to a thin sheet of electrons. The density and mobility of the electrons in the sheet are critical for the operation of the HEMT. HEMTs consisting of AlGaN/GaN/Si are being studied because they promise better performance at higher currents, temperatures, and frequencies than conventional silicon HEMTs can achieve. In one study, the Hall effect was used to measure the density of electrons in one of these new HEMTs. When a current of 10.0 μA flows through the length of the electron sheet, which is 1.00 mm long, 0.300 mm wide, and 10.0 nm thick, a magnetic field of 1.00 T perpendicular to the sheet produces a voltage of 0.680 mV across the width of the sheet. What is the density of electrons in the sheet?
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