A group of a small appliances on a 60Hz system requires 20kVA at 0.85 pf lagging when operated at 125 V(rms). The impedance of the feeder supplying the appliances is 0.01 + j0.080. The voltage at the load end of the feeder is 125 V(rms). a) What is the rms magnitude of the voltage at the source end of the feeder? b) What is the average power loss in the feeder? c) What is the capacitor ( in microfarads) across the load end of the feeder is needed to improve the load power factor to unity?
MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
MOSFET stands for Metal Oxide Silicone Field Effect Transistor or Metal Oxide Semiconductor Field Effect Transistor. It is a type of IGFET, which means Insulated Gate Field Effect Transistor. A MOSFET has four-terminals namely gate (G), drain (D), source (S), and body (B). The body of the MOSFET is connected to the source terminal and it forms a three-terminal device. It is used in both the analog and digital circuits.
Power MOSFET
The power MOSFET transistor structures are enhancement types. The voltage rating is enhanced in the enhancement-mode MOSFETs by the use of a drift layer. The MOSFET generally contains four layers. The middle layer is the p-type layer also known as the body, whereas the n-type layer is called the drift layer or region. The drift region decides the breakdown voltage, and hence it is the lightly doped region in power MOSFETs. The first and last layers are the n+ layers. The first layer and the last layers are the source and drain layers. The structure of N-channel MOSFET (e-MOSFET) is n+ p n- n+, but the shape of p-channel is the opposite doping shape.
PLEASE WRITE THE WAY AND THE STEPS OF THE SOLUTION , THANK YOU .
Step by step
Solved in 4 steps with 4 images
