A GaAs LED is to be coupled with an optical fiber at an acceptance angle of 55, the fiber core refractive index is 1.4, caleulatethe critical angle above which light can propagate in the fiberSelect one:OA. 51.04 DegreesOB. 54.19 DegreesOC.55.97 DegreesOD. 52.56 DegreesOE. 49.19 Degrees : Si, Ge, GaAs Parameters and Universal ConstantsUNIVERSAL CONSTANTSPropertiesSEMICONDUCTOR6.63 x 10-34 J.sSiGeGa As-31m.9.11 x 10KgEg (eV)1; (cm-3)Hn (cm2/V-s)4p (cm2/V-s)Ne (em-3)N. (cm-3)m/m.m, /m.& (F/m)1.10.671.423.141.5 x 10102.3 x 10131.8 x 1061.602 x 10-19C150039008500Eo8.85 x 10-12 F/m45019004001.05 x 10-4 J-s2.78 x 10191.04 x 10194.45 x 1017K8.6 x 10-5 eV/K9.84 x 10186 x 10187.72 x 1018KT/q26 mV (T 3 300 К)0.0820.980.067KT26 meV (T 300 K)0.280.490.453 x 10 m/sC11.71613.1nair = 1nGaAs = 3.66Some useful relationsEgA Ga-As(r) = 1.424 +1.247rEgin,Gaz -As(r) = 0.36+1.064r1 eV = 1.602 x 10-19 J1 KG = 1 x 10-5 Wb/em2

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A GaAs LED is to be coupled with an optical fiber at an acceptance angle of 55, the fiber core refractive index is 1.4, caleulate the critical angle above which light can propagate in the fiber Select one: OA. 51.04 Degrees OB. 54.19 Degrees OC. 55.97 Degrees OD. 52.56 Degrees OE. 49.19 Degrees

A GaAs LED is to be coupled with an optical fiber at an acceptance angle of 55, the fiber core refractive index is 1.4, caleulate the critical angle above which light can propagate in the fiber Select one: OA. 51.04 Degrees OB. 54.19 Degrees OC. 55.97 Degrees OD. 52.56 Degrees OE. 49.19 Degrees

Advanced Engineering Mathematics

10th Edition

ISBN:9780470458365

Author:Erwin Kreyszig

Publisher:Erwin Kreyszig

Chapter2: Second-order Linear Odes

Section: Chapter Questions

Problem 1RQ

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Question

A GaAs LED is to be coupled with an optical fiber at an acceptance angle of 55, the fiber core refractive index is 1.4, caleulate
the critical angle above which light can propagate in the fiber
Select one:
OA. 51.04 Degrees
OB. 54.19 Degrees
OC.55.97 Degrees
OD. 52.56 Degrees
OE. 49.19 Degrees

: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 x 10-34 J.s
Si
Ge
Ga As
-31
m.
9.11 x 10
Kg
Eg (eV)
1; (cm-3)
Hn (cm2/V-s)
4p (cm2/V-s)
Ne (em-3)
N. (cm-3)
m/m.
m, /m.
& (F/m)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19C
1500
3900
8500
Eo
8.85 x 10-12 F/m
450
1900
400
1.05 x 10-4 J-s
2.78 x 1019
1.04 x 1019
4.45 x 1017
K
8.6 x 10-5 eV/K
9.84 x 1018
6 x 1018
7.72 x 1018
KT/q
26 mV (T 3 300 К)
0.082
0.98
0.067
KT
26 meV (T 300 K)
0.28
0.49
0.45
3 x 10 m/s
C
11.7
16
13.1
nair = 1
nGaAs = 3.66
Some useful relations
EgA Ga-As(r) = 1.424 +1.247r
Egin,Gaz -As(r) = 0.36+1.064r
1 eV = 1.602 x 10-19 J
1 KG = 1 x 10-5 Wb/em2

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