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A copper wire of diameter D = 1mm is crossed by an intensity of 2A. knowing that the electron concentration is 8.45x1028 m-3, determine the rate at which the electrons are drawn. It is assumed that the wire is 2.5 m long and that it is subjected to a potential difference of 0.1 V. Then calculate the mobility of the electrons and deduce the conductivity of the wire.

A copper wire of diameter D = 1mm is crossed by an intensity of 2A. knowing that the electron concentration is 8.45x1028 m-3, determine the rate at which the electrons are drawn. It is assumed that the wire is 2.5 m long and that it is subjected to a potential difference of 0.1 V. Then calculate the mobility of the electrons and deduce the conductivity of the wire.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Exercise 4

Exercise 4 A copper wire of diameter D = 1mm is crossed by an intensity of 2A. knowing that the electron concentration is 8.45x1028 m-3, determine the rate at which the electrons are drawn. It is assumed that the wire is 2.5 m long and that it is subjected to a potential difference of 0.1 V. Then calculate the mobility of the electrons and deduce the conductivity of the wire. Exercise 5 We consider a germanium crystal of type P, resistivity 0.01 2. cm at 27 °C. We recall that for such a temperature, the intrinsic concentration is given by the law n₁ = AT³/² exp(-), with A = 10²2. The mobility of the holes is then 0.17 S.I. Recall that k = 1.38x10-23 S.I. 1. Calculate the hole concentration; 2. Deduce the concentration of free electrons 3. Repeat the calculations of questions a) and b) for a germanium crystal with resistivity 10.0 2. cm. Exercise 6 Evaluate the density of charge carriers in intrinsic silicon at 300 K. We give Eg = 1.12eV, mi = 0.98m, m = 0.19m, min = 0.16m, mhh = 0.49m. Knowing that me = (6) 2/3 (mim²) ¹/3, mi (mi2/2 + m3/2)2/3 and +3/2 3/4 3/4 - (2.5 (³) n₁ = 2K)) 10 Eg 3/2 Т (T)³7² exp(-2KBT) 1019 cm-3. Calculate the concentration of charge carriers at T = 300 K in silicon doped with 1016 arsenic atoms per cm³ if n = 1.45x10¹0 cm-³.
Transcribed Image Text:Exercise 4 A copper wire of diameter D = 1mm is crossed by an intensity of 2A. knowing that the electron concentration is 8.45x1028 m-3, determine the rate at which the electrons are drawn. It is assumed that the wire is 2.5 m long and that it is subjected to a potential difference of 0.1 V. Then calculate the mobility of the electrons and deduce the conductivity of the wire. Exercise 5 We consider a germanium crystal of type P, resistivity 0.01 2. cm at 27 °C. We recall that for such a temperature, the intrinsic concentration is given by the law n₁ = AT³/² exp(-), with A = 10²2. The mobility of the holes is then 0.17 S.I. Recall that k = 1.38x10-23 S.I. 1. Calculate the hole concentration; 2. Deduce the concentration of free electrons 3. Repeat the calculations of questions a) and b) for a germanium crystal with resistivity 10.0 2. cm. Exercise 6 Evaluate the density of charge carriers in intrinsic silicon at 300 K. We give Eg = 1.12eV, mi = 0.98m, m = 0.19m, min = 0.16m, mhh = 0.49m. Knowing that me = (6) 2/3 (mim²) ¹/3, mi (mi2/2 + m3/2)2/3 and +3/2 3/4 3/4 - (2.5 (³) n₁ = 2K)) 10 Eg 3/2 Т (T)³7² exp(-2KBT) 1019 cm-3. Calculate the concentration of charge carriers at T = 300 K in silicon doped with 1016 arsenic atoms per cm³ if n = 1.45x10¹0 cm-³.
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