A circuit is built around a bi-polar NPN transistor. The base nétwork has a diode and a capacitor in series while the collector is connected to a power supply through a resistor. If the emitter is connected to ground: i) in) b) Draw the circuit Provide all the masking layout of the circuit

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fabrication of monolithic ICs.
A circuit is built around a bi-polar NPN transistor. The base network has a diode and
a capacitor in series while the collector is connected to a power supply through a
resistor. If the emitter is connected to ground:
i)
ii)
b)
Draw the circuit
Provide all the masking layout of the circuit
c)
Figl.1 shows a p-diffusion resistor fabricated with a sheet resistance of 120 Ohm per
square. The coners and the pads are estimated to have 0.6 of the value of a regular
sheet resistance. Find the value of the resulting resistor.
20cm
2em
10cm
2 ст
10cm
2crn
profortact kPI
Page 1 of 3
Figl.1
K. Diawuo
OO SPARK4 AM
Transcribed Image Text:fabrication of monolithic ICs. A circuit is built around a bi-polar NPN transistor. The base network has a diode and a capacitor in series while the collector is connected to a power supply through a resistor. If the emitter is connected to ground: i) ii) b) Draw the circuit Provide all the masking layout of the circuit c) Figl.1 shows a p-diffusion resistor fabricated with a sheet resistance of 120 Ohm per square. The coners and the pads are estimated to have 0.6 of the value of a regular sheet resistance. Find the value of the resulting resistor. 20cm 2em 10cm 2 ст 10cm 2crn profortact kPI Page 1 of 3 Figl.1 K. Diawuo OO SPARK4 AM
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