fabrication of monolithic ICs.A circuit is built around a bi-polar NPN transistor. The base network has a diode anda capacitor in series while the collector is connected to a power supply through aresistor. If the emitter is connected to ground:i)ii)b)Draw the circuitProvide all the masking layout of the circuitc)Figl.1 shows a p-diffusion resistor fabricated with a sheet resistance of 120 Ohm persquare. The coners and the pads are estimated to have 0.6 of the value of a regularsheet resistance. Find the value of the resulting resistor.20cm2em10cm2 ст10cm2crnprofortact kPIPage 1 of 3Figl.1K. DiawuoOO SPARK4 AM

A circuit is built around a bi-polar NPN transistor. The base nétwork has a diode and a capacitor in series while the collector is connected to a power supply through a resistor. If the emitter is connected to ground: i) in) b) Draw the circuit Provide all the masking layout of the circuit

A circuit is built around a bi-polar NPN transistor. The base nétwork has a diode and a capacitor in series while the collector is connected to a power supply through a resistor. If the emitter is connected to ground: i) in) b) Draw the circuit Provide all the masking layout of the circuit

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question

fabrication of monolithic ICs.
A circuit is built around a bi-polar NPN transistor. The base network has a diode and
a capacitor in series while the collector is connected to a power supply through a
resistor. If the emitter is connected to ground:
i)
ii)
b)
Draw the circuit
Provide all the masking layout of the circuit
c)
Figl.1 shows a p-diffusion resistor fabricated with a sheet resistance of 120 Ohm per
square. The coners and the pads are estimated to have 0.6 of the value of a regular
sheet resistance. Find the value of the resulting resistor.
20cm
2em
10cm
2 ст
10cm
2crn
profortact kPI
Page 1 of 3
Figl.1
K. Diawuo
OO SPARK4 AM

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