A bar of Si is doped with boron at 105cm. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020/s-cm?. The recombination lifetime is 10 µs. (a) equilibrium carrier 6): concentrations: po?, no?, (c) excess carrier concentrations: p', n'? (e) p, (f) n, and (g) the np product? (h) If the light is suddenly turned off at t = 0, find n'(t) for t> 0.
A bar of Si is doped with boron at 105cm. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020/s-cm?. The recombination lifetime is 10 µs. (a) equilibrium carrier 6): concentrations: po?, no?, (c) excess carrier concentrations: p', n'? (e) p, (f) n, and (g) the np product? (h) If the light is suddenly turned off at t = 0, find n'(t) for t> 0.
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Transcribed Image Text:6):. A bar of Si is doped with boron at 105cm3. It is exposed to light such that electron-hole pairs are generated
throughout the volume of the bar at the rate of 1020/s-cm?. The recombination lifetime is 10 us. (a) equilibrium carrier
concentrations: po?, no?, (c) excess carrier concentrations: p', n'? (e) p, (f) n, and (g) the np product? (h) If the light is
suddenly turned off at t = 0, find n'(t) for t>0.
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