(a)Answer parts i), i),ii) and iv) side by side so that the relativescales are obvious, include electron occupancy.(i) Draw the band structure of potassium(ii) Draw the band structure of silicon(iii) Draw the band structure of carbon(iv) Draw the band structure of germanium(b)Based on your diagrams, state the order of electricallyconductivity for the four elements at 300 K, from the smallest tothe highest - explain your choice.Magnesium has an electron configuration of 1s? 2s? 2p° 3s?. Usingband diagrams explain why this element is considered an(c)electrical conductor.(d)improve its ability to conduct electricity. What type of extrinsicsemiconductor results and explain how the addition of arsenicincreases conductivity (use diagrams if necessary)?A small amount of arsenic is added to a sample of silicon to(i) Gallium phosphide (GaP) has a band gap of 2.26 eV. Calculatethe wavelength of light emitted in nm (1 eV = 1.6 x 1019 J).(e)(ii) It is required for a particular technology to emit light at awavelength greater than pure GaP can provide. Starting frompure GaP explain how we can achieve this, explaining vouranswer.

(a) Answer parts i), ii), ii) and iv) side by side so that the relative scales are obvious, include electron occupancy. (i) Draw the band structure of potassium (ii) Draw the band structure of silicon (iii) Draw the band structure of carbon (iv) Draw the band structure of germanium (b) Based on your diagrams, state the order of electrically conductivity for the four elements at 300 K, from the smallest to the highest - explain your choice. (c) Magnesium has an electron configuration of 1s 2s 2p 3s?. Using band diagrams explain why this element is considered an electrical conductor. (d) A small amount of arsenic is added to a sample of silicon to improve its ability to conduct electricity. What type of extrinsic semiconductor results and explain how the addition of arsenic increases conductivity (use diagrams if necessary)? (e) (i) Gallium phosphide (GaP) has a band gap of 2.26 ev. Calculate the wavelength of light emitted in nm (1 eV = 1.6 x 1019 J). (ii) It is required for a particular technology to emit light at a wavelength greater than pure GaP can provide. Starting from pure GaP explain how we can achieve this, explaining vour answer.

(a) Answer parts i), ii), ii) and iv) side by side so that the relative scales are obvious, include electron occupancy. (i) Draw the band structure of potassium (ii) Draw the band structure of silicon (iii) Draw the band structure of carbon (iv) Draw the band structure of germanium (b) Based on your diagrams, state the order of electrically conductivity for the four elements at 300 K, from the smallest to the highest - explain your choice. (c) Magnesium has an electron configuration of 1s 2s 2p 3s?. Using band diagrams explain why this element is considered an electrical conductor. (d) A small amount of arsenic is added to a sample of silicon to improve its ability to conduct electricity. What type of extrinsic semiconductor results and explain how the addition of arsenic increases conductivity (use diagrams if necessary)? (e) (i) Gallium phosphide (GaP) has a band gap of 2.26 ev. Calculate the wavelength of light emitted in nm (1 eV = 1.6 x 1019 J). (ii) It is required for a particular technology to emit light at a wavelength greater than pure GaP can provide. Starting from pure GaP explain how we can achieve this, explaining vour answer.

Chemistry

10th Edition

ISBN:9781305957404

Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Chapter1: Chemical Foundations

Section: Chapter Questions

Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...

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