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9. Use this information to answer Question 9-12: Consider a step pn junction made of silicon. The doping densities in the p- and n-sides are NA = 5 x 1015 cm-3 and Np = 1 x 1014 cm-³, respectively. Find the built-in potential in unit of V. Answers within 5% error will be considered correct. Enter answer here 10. Determine the depletion region width, xn, in the n-side in unit of um. Answers within 5% error will be considered correct. Enter answer here 11. Determine the depletion region width, xp, in the p-side in unit of um. Answers within 5% error will be considered correct. Enter answer here 12. What is the applied bias voltage (in V) required to have a, = 30 µm. Answers within 5% error will be considered correct. Enter answer here

9. Use this information to answer Question 9-12: Consider a step pn junction made of silicon. The doping densities in the p- and n-sides are NA = 5 x 1015 cm-3 and Np = 1 x 1014 cm-³, respectively. Find the built-in potential in unit of V. Answers within 5% error will be considered correct. Enter answer here 10. Determine the depletion region width, xn, in the n-side in unit of um. Answers within 5% error will be considered correct. Enter answer here 11. Determine the depletion region width, xp, in the p-side in unit of um. Answers within 5% error will be considered correct. Enter answer here 12. What is the applied bias voltage (in V) required to have a, = 30 µm. Answers within 5% error will be considered correct. Enter answer here

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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9. Use this information to answer Question 9-12: Consider a step pn junction made of silicon. The doping densities in the p- and n-sides are NA = 5 × 1015 cm-3 and Np =1 x 1014cm ³, respectively. Find the built-in potential in unit of V. Answers within 5% error will be considered correct. Enter answer here 10. Determine the depletion region width, 2n, in the n-side in unit of um. Answers within 5% error will be considered correct. Enter answer here 11. Determine the depletion region width, ap, in the p-side in unit of um. Answers within 5% error will be considered correct. Enter answer here 12. What is the applied bias voltage (in V) required to have 2, = 30 µm. Answers within 5% error will be considered correct. Enter answer here
Transcribed Image Text:9. Use this information to answer Question 9-12: Consider a step pn junction made of silicon. The doping densities in the p- and n-sides are NA = 5 × 1015 cm-3 and Np =1 x 1014cm ³, respectively. Find the built-in potential in unit of V. Answers within 5% error will be considered correct. Enter answer here 10. Determine the depletion region width, 2n, in the n-side in unit of um. Answers within 5% error will be considered correct. Enter answer here 11. Determine the depletion region width, ap, in the p-side in unit of um. Answers within 5% error will be considered correct. Enter answer here 12. What is the applied bias voltage (in V) required to have 2, = 30 µm. Answers within 5% error will be considered correct. Enter answer here
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