9-50) describes the application of t integrated circuit manufacturing o grow an epitaxial layer on poli- fers mounted on a susceptor are p d chemical vapors are introduced. nd heat is applied until the epitax an experiment was run using two ) and deposition time (B). Four m pitaxial layer thickness was measur in Table P6.1. 11 Replicate 6.165 3.860 4.757 4.921 13.972 14.032 14.843 14.415 IV 13.907 13.914 14.878 14.932

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Question4: An article in the AT&T Technical Journal (March/April
1986, Vol. 65, pp. 39-50) describes the application of two-level
factorial designs to integrated circuit manufacturing. A basic
processing step is to grow an epitaxial layer on polished sili-
con wafers. The wafers mounted on a susceptor are positioned
inside a bell jar, and chemical vapors are introduced. The sus-
ceptor is rotated, and heat is applied until the epitaxial layer
is thick enough. An experiment was run using two factors:
arsenic flow rate (A) and deposition time (B). Four replicates
were run, and the epitaxial layer thickness was measured (μm).
The data are shown in Table P6.1.
TABLE P6.1
The 2¹ Design for Problem 6.16
A
B
I
14.037
13.880
14.821
14.888
11
Replicate
16.165
13.860
14.757
14.921
III
13.972
14.032
14.843
14.415
IV
13.907
13.914
14.878
14.932
A
8
Factor Levels
Low (-)
55%
Short
(10 min)
(a) Estimate the factor effects.
(b) Conduct an analysis of variance. Which factors are
important?
(e) Write down a regression equation that could be used
to predict epitaxial layer thickness over the region
of arsenic flow rate and deposition time used in this
experiment.
(d) Analyze the residuals. Are there any residuals that
should cause concern?
(e) Discuss how you might deal with the potential outlier
found in part (d).
High (+)
59%
Long
(15 min)
Transcribed Image Text:Question4: An article in the AT&T Technical Journal (March/April 1986, Vol. 65, pp. 39-50) describes the application of two-level factorial designs to integrated circuit manufacturing. A basic processing step is to grow an epitaxial layer on polished sili- con wafers. The wafers mounted on a susceptor are positioned inside a bell jar, and chemical vapors are introduced. The sus- ceptor is rotated, and heat is applied until the epitaxial layer is thick enough. An experiment was run using two factors: arsenic flow rate (A) and deposition time (B). Four replicates were run, and the epitaxial layer thickness was measured (μm). The data are shown in Table P6.1. TABLE P6.1 The 2¹ Design for Problem 6.16 A B I 14.037 13.880 14.821 14.888 11 Replicate 16.165 13.860 14.757 14.921 III 13.972 14.032 14.843 14.415 IV 13.907 13.914 14.878 14.932 A 8 Factor Levels Low (-) 55% Short (10 min) (a) Estimate the factor effects. (b) Conduct an analysis of variance. Which factors are important? (e) Write down a regression equation that could be used to predict epitaxial layer thickness over the region of arsenic flow rate and deposition time used in this experiment. (d) Analyze the residuals. Are there any residuals that should cause concern? (e) Discuss how you might deal with the potential outlier found in part (d). High (+) 59% Long (15 min)
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