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7. For a certain semiconductor compensated semiconductor N,2x10 cm', N-6 10' cm'and n-10" cm. At an instant when the excess carrier concentration was 10"em. The mobility that both excess holes and electrons will drift is equal to Hn300 cm/N-sec, u 600 cm/V-sec. cm/V-sec. Given that

7. For a certain semiconductor compensated semiconductor N,2x10 cm', N-6 10' cm'and n-10" cm. At an instant when the excess carrier concentration was 10"em. The mobility that both excess holes and electrons will drift is equal to Hn300 cm/N-sec, u 600 cm/V-sec. cm/V-sec. Given that

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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a) 0.05 el 7. For a certain semiconductor compensated semiconductor Na2x10 cm, N-6 10 cm'and n-10 cm. At an instant when the excess carrier concentration was 10"cm. The mobility that both excess holes and electrons will drift is equal to Hn 300 cm/V-see, u 600 cmN-sec. . ... cm/V-sec. Given that %3D a) 200 b)300 c) 450 d) 600 e) 900 tuna semiconductor is function of
Transcribed Image Text:a) 0.05 el 7. For a certain semiconductor compensated semiconductor Na2x10 cm, N-6 10 cm'and n-10 cm. At an instant when the excess carrier concentration was 10"cm. The mobility that both excess holes and electrons will drift is equal to Hn 300 cm/V-see, u 600 cmN-sec. . ... cm/V-sec. Given that %3D a) 200 b)300 c) 450 d) 600 e) 900 tuna semiconductor is function of
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